Fabrication of thin wafers from nanocrystalline silicon powders

N. N. Kononov; G. P. Kuz'min; O. V. Tikhonevitch; A. A. Surkov; E. M. Khokhlov

doi:10.1117/12.633740

7 June 2005 Fabrication of thin wafers from nanocrystalline silicon powders

N. N. Kononov, G. P. Kuz'min, O. V. Tikhonevitch, A. A. Surkov, E. M. Khokhlov

Proceedings Volume 5850, Advanced Laser Technologies 2004; (2005) https://doi.org/10.1117/12.633740
Event: Advanced Laser Technologies 2004, 2004, Rome and Frascati, Italy

Abstract

The wafers of thickness 60μm÷100μm were made at compression of nanocrystalline silicon (nc-Si) powders in a range of pressures from 10⁸ up to 10⁹ Pa. Optical and electrical properties ofthese wafers have been investigated by means of registration of IR transmission spectra and dark conductivities. Analysis of IR absorption spectra of wafers shows that structures Si-H, Si-CH_x and O_x-Si-H_y (x,y=1÷3) are formed at a pressing of nc-Si powder. We believe that these structures are formed at pressing of powder after break of links in network of a silicon atoms and consequent saturation of Si-dangling bonds by hydrogen, carbon or oxygen atoms which are located on free surfaces of silicon particles. It is found that dark conductivity of a wafer is depending on temperature of buffer gas in which original powder is formed. Wafers which have been made of the powders created at higher temperatures of a buffer gas flow had more pronounced hydrogen microstructure and higher dark conductivity. Analysis of dark conductivity vs. temperature T of the wafer shows that at the temperatures higher than approximately 270K the conductivity follows Arrhenius behavior with single activation energy, and at lower ones, conductivity is depending on T as: σ=(A/T^1/2)-exp(-B/T^1/4). Last equation allows asserting that variable-range hopping is mechanism oftransport in nc-Si wafers at temperatures T<270K.

Citation Download Citation

N. N. Kononov, G. P. Kuz'min, O. V. Tikhonevitch, A. A. Surkov, and E. M. Khokhlov "Fabrication of thin wafers from nanocrystalline silicon powders", Proc. SPIE 5850, Advanced Laser Technologies 2004, (7 June 2005); https://doi.org/10.1117/12.633740

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