Post-develop inspection for defect control by using the Lasertec 9MD83SRII system

Andrew Wang; Wayne P. Shen; T. Nakashima; Kaku Ozawa

doi:10.1117/12.373365

30 December 1999 Post-develop inspection for defect control by using the Lasertec 9MD83SRII system

Andrew Wang, Wayne P. Shen, T. Nakashima, Kaku Ozawa

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373365
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

In this study, Lasertec 9MD83SRII die-to-die inspection system was used for the post develop resist layer inspection. Residue resist defects were detected after develop. Defect locations were recorded. This result was compared with the inspection result after the final etching. Defect formation mechanism for different types of defects has been discussed in detail. Certain possible improvements have been made and results have been examined by the same technique. This study is a good understanding to resolve issues, such as defect problems of chrome dry etching.

Citation Download Citation

Andrew Wang, Wayne P. Shen, T. Nakashima, and Kaku Ozawa "Post-develop inspection for defect control by using the Lasertec 9MD83SRII system", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373365

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