Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing

Lye Huat Lee; Oki Gunawan; Boon Siew Ooi; Yan Zhou; Yuen Chuen Chan; Yee Loy Lam

doi:10.1117/12.369388

9 November 1999 Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing

Lye Huat Lee, Oki Gunawan, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, Yee Loy Lam

Author Affiliations +

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369388
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Quantum well intermixing (QWI) is a promising technology for the fabrication of photonic integrated circuits (PICs). In this paper, we report the development of a new QWI process using undoped and Er-doped SiO₂ dielectric caps prepared using sol-gel technique. A differential bandgap shift of as large as 83meV have been observed from samples intermixed with Er-doped SiO₂ respectively. Broad area gain guided lasers have been fabricated from the as-grown and samples with bandgap tuned to different degrees using undoped and Er-doped SiO₂. Lasers fabricated from the as-grown, undoped and Er-doped SiO₂ samples showed lasing wavelengths of 865nm, 850nm and 835nm respectively. Compared to the 865nm, the threshold current of the 850nm and 835nm wavelength lasers were found to increase by 5 percent and 9.5 percent respectively. The slope efficiencies from these lasers were found to exhibit only small change compared to the as-grown lasers. These results imply that the quality of the material remains relatively high after intermixed using sol-gel SiO₂ induced QWI technique.

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Lye Huat Lee, Oki Gunawan, Boon Siew Ooi, Yan Zhou, Yuen Chuen Chan, and Yee Loy Lam "Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369388

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