Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use

Katsuhiko Nishida; Hideo Iwasaki; Kenko Taguchi

doi:10.1117/12.935175

30 November 1983 Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use

Katsuhiko Nishida, Hideo Iwasaki, Kenko Taguchi

Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935175
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

Device structure parameters governing APD performances are discussed and optimum conditions are elucidated for both Ge APDs and heterostructure InGaAs APDs. Two types of Ge APDs with p+n and p+nn- structures were developed for use in 1.0 ~ 1.55 um wavelength. The dark current of Ge APDs was reduced to improve detection sensitivity by newly developed processes. Heterojunction InGaAs APDs were developed, which are formed in a top window type planar structure with an InP cap. Avalanche gain of about 30 and low dark current density of about 2 x 10-5A/cm2 at 0.9VB were obtained. High bit-rate operation was achieved at 450Mb/s.

Citation Download Citation

Katsuhiko Nishida, Hideo Iwasaki, and Kenko Taguchi "Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); https://doi.org/10.1117/12.935175

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