Paper
23 June 2000 193-nm photoresist development at Union Chemical Labs., ITRI
Mao-Ching Fang, Jui-Fa Chang, Ming-Chia Tai, Tzu-Yu Lin, Ting-Chung Liu, Chien-Hung Liu
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Abstract
Union Chemical Laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excimer laser lithography. These polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 micrometer line/space patterns using an ArF stepper and 2.38 wt% tetramethylammonium hydroxide aqueous solution as a developer. Furthermore, alternating phase shift mask was used in combination with a feature size as small as 0.1 micrometer. To overcome post exposure delay (PED) effect caused by airborne contamination, three new base additives were used in the resist formulation. The etching-resist ability of resists by reaction ion etching (RIE) was showed better than conventional g-line and KrF excimer laser resists. Experimental results of CHF3/CF4 as etch gas, indicate that the etching rate selectivity with respect to SiO2 is about 0.5. The UCL photoresists also showed good shelf life stability.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mao-Ching Fang, Jui-Fa Chang, Ming-Chia Tai, Tzu-Yu Lin, Ting-Chung Liu, and Chien-Hung Liu "193-nm photoresist development at Union Chemical Labs., ITRI", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388378
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KEYWORDS
Photoresist materials

Etching

Polymers

Lithography

Reactive ion etching

Photomasks

Photoresist developing

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