Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks

Laurent Dieu; Peter F. Carcia; Hideaki Mitsui; Kunihiko Ueno

doi:10.1117/12.410762

22 January 2001 Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks

Laurent Dieu, Peter F. Carcia, Hideaki Mitsui, Kunihiko Ueno

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410762
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

Improving microprocessor speed, design and density are mainly determined by the minimum feature size that can be imaged on the wafer [1]. On the other hand, the latter is limited by the optics, the lithographic wavelength and the process used. Phase shift photomasks were introduced to extend the usefulness of any optical lithographic generation [2,3]. As smaller feature sizes are required by the IC industry, the use of phase shift masks is expected to increase for a specific stepper generation.

Citation Download Citation

Laurent Dieu, Peter F. Carcia, Hideaki Mitsui, and Kunihiko Ueno "Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410762

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