Thermal and electronic nonlinearities in semiconductor cavities

Giovanna Tissoni; Lorenzo Spinelli; Luigi A. Lugiato; Massimo Brambilla

doi:10.1117/12.432608

9 July 2001 Thermal and electronic nonlinearities in semiconductor cavities

Giovanna Tissoni, Lorenzo Spinelli, Luigi A. Lugiato, Massimo Brambilla

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432608
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The dead-space carrier multiplication theory properly predicts the reduction in the excess noise factor in a number of APDs. The theory is applied to measurements, obtained from J. C. Campbell and collaborators at the University of Texas, for InP, InAlAs, GaAs, and AlGaAs APDs with multiplication-region widths ranging from 80 nm to 1600 nm. A refined model for the ionization coefficients is reported that is independent of the width of the device multiplication region of each device. In addition, in comparison to predictions from the conventional multiplication theory, the dead-space multiplication theory predicts a reduction in the mean bandwidth as well as a reduction in the power spectral density of the impulse response. In particular, it is shown that the avalanching noise at high-frequencies is reduced as a result of the reduction of the multiplication region width.

Citation Download Citation

Giovanna Tissoni, Lorenzo Spinelli, Luigi A. Lugiato, and Massimo Brambilla "Thermal and electronic nonlinearities in semiconductor cavities", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432608

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