CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 4344 > Article
Paper
22 August 2001 Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography
Michael Fritze, Brian Tyrrell, David K. Astolfi, Paul Davis, Bruce Wheeler, Renee D. Mallen, J. Jarmolowicz, Susan G. Cann, David Y. Chan, Peter D. Rhyins, Martin E. Mastovich, Neal T. Sullivan, Robert Brandom, Chris Carney, John E. Ferri, B. A. Blachowicz
Author Affiliations +
Proceedings Volume 4344, Metrology, Inspection, and Process Control for Microlithography XV; (2001) https://doi.org/10.1117/12.436759
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
Achieving CD control for sub-100 nm processes will be challenging due to the low-k1 regime that optical patterning approaches will be required to work in. New challenges are expected to arise related to new lithography tools, photoresists, reticle types, and in some cases multiple exposures per layer. This work examines the intra-field CD variations for a range of sub-100 nm resist features patterned by chromeless phase-shift 248-nm lithography. One significant advantage of this patterning technique is that the resist CD's are a function of the exposure dose. This provides the ability to examine the CD variations of a range of linewidths in a single experiment without relying on reticle pattern scaling to determine the linewidth printed on the wafer. In addition to exploring CD control vs feature size, we also examine the full-field depth of focus for these features.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Michael Fritze, Brian Tyrrell, David K. Astolfi, Paul Davis, Bruce Wheeler, Renee D. Mallen, J. Jarmolowicz, Susan G. Cann, David Y. Chan, Peter D. Rhyins, Martin E. Mastovich, Neal T. Sullivan, Robert Brandom, Chris Carney, John E. Ferri, and B. A. Blachowicz "Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436759
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 10 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography
Semiconducting wafers
Optical lithography
Photomasks
Critical dimension metrology
Cadmium
Resolution enhancement technologies
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top