Modification of development parameters of 193-nm chemically amplified resist with pattern density

Eun-Jung Seo; Young-Soo Sohn; Heungin Bak; Hye-Keun Oh; Sang-Gyun Woo; Nakgeuon Seong; Hanku Cho

doi:10.1117/12.436821

24 August 2001 Modification of development parameters of 193-nm chemically amplified resist with pattern density

Eun-Jung Seo, Young-Soo Sohn, Heungin Bak, Hye-Keun Oh, Sang-Gyun Woo, Nakgeuon Seong, Hanku Cho

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436821
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

It is necessary to have more appropriate resist parameters for a lithography simulator to predict the real photoresist profile. Especially, the development parameters can be crucial to mimic the real process. It has been reported that the development parameters of photoresist with or without underlying patterns are different. Since pattern density could affect the development parameters of the photoresist, the development parameters need to be modified for better simulation. We studied the changes of development parameters due to pattern density underlying photoresist and compared the simulated resist profiles with SEM microphotogrpahs. First, we obtained the development parameters by flood exposure experiment and applied them to our lithography simulator LUV. The simulated resist profile was then compared to SEM microphotograph. Second, we tried to modify the development parameters for the simulated resist profile to match SEM photograph. The development parameters should be modified according to the pattern density for more accurate lithography simulation. We also determined the relationship between the changes of the parameters and the pattern density. To investigate the effect of the modification we analyzed the line width differences before and after the modification.

Citation Download Citation

Eun-Jung Seo, Young-Soo Sohn, Heungin Bak, Hye-Keun Oh, Sang-Gyun Woo, Nakgeuon Seong, and Hanku Cho "Modification of development parameters of 193-nm chemically amplified resist with pattern density", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436821

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available