Paper
14 September 2001 Carbon antireflective coating (ARC) technology for both KrF and ArF lithography
Yongbeom Kim, Junghyun Lee, Hanku Cho, Joo-Tae Moon
Author Affiliations +
Abstract
In device integration smaller than 0.18 micrometer design rule, application of the ARC (antireflective coating) technology is unavoidable and SiON ARC and organic ARC are well-known materials up to now. In this paper, as an alternative way, new carbon ARC (CARC) material with the properties of easy stripping and good step coverage is presented. The details of its characteristics related to photo, etch and cleaning process and electrical properties after application to the real devices is investigated. The feasibility of the new CARC for both KrF and ArF lithography was confirmed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongbeom Kim, Junghyun Lee, Hanku Cho, and Joo-Tae Moon "Carbon antireflective coating (ARC) technology for both KrF and ArF lithography", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435632
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KEYWORDS
Carbon

Etching

Reflectivity

Lithography

Scanning electron microscopy

Semiconducting wafers

Refractive index

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