One step forward to maturity of AF (assistant feature)-OPC in 100-nm level DRAM application

Hyunjae Kang; Byeongsoo Kim; Joonsoo Park; Insung Kim; Gisung Yeo; Junghyun Lee; Hanku Cho; Joo-Tae Moon

doi:10.1117/12.458274

11 March 2002 One step forward to maturity of AF (assistant feature)-OPC in 100-nm level DRAM application

Hyunjae Kang, Byeongsoo Kim, Joonsoo Park, Insung Kim, Gisung Yeo, Junghyun Lee, Hanku Cho, Joo-Tae Moon

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458274
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

For 100nm-level patterning using optical lithography, high NA system and various RETs such as PSM, off-axis illumination and OPC are obviously required. In particular, assistant feature (AF)-OPC is indispensable to overcome narrow depth of focus (DOF) caused by iso-dense bias and to compensate for linearity difference under the given OAI condition. Previously we reported the application of AF-OPC in DRAM process with 120nm design rule. The extraction of OPC rule and the feasibility of AF-OPC were successfully confirmed by experimental method in real process. In this paper, more comprehensive and aggressive AF-OPC rule is investigated. The old rule is modified in order to obtain larger common DOF. TO avoid dead zone that means discontinuity between dense line and semi-dense line, we apply a comprehensive rule such as insertion of AF between the neighboring main patterns as many as possible. As a result, the discontinuity of OPC application, which is used with or without AF in the boundary region, is effectively minimized. Also, polygon-shaped AF is used to improve DOF of special main pattern. And then, the mask specification and the behavior of isolated line pattern are predicted in case of very high NA KrF and ArF lithography by simulation result. Considering 100nm design rule, the decrease of common DOF is expected to be severer than now. Finally, the optimum AF-OPC rules such as AF size, space and shape are available and shown in case of very high NA KrF and ArF lithography.

Citation Download Citation

Hyunjae Kang, Byeongsoo Kim, Joonsoo Park, Insung Kim, Gisung Yeo, Junghyun Lee, Hanku Cho, and Joo-Tae Moon "One step forward to maturity of AF (assistant feature)-OPC in 100-nm level DRAM application", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458274

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Atrial fibrillation

Optical proximity correction

Lithography

Optical lithography

Lithographic illumination

Photomask technology

Photomasks

Show All Keywords

Keywords/Phrases

Search In:

Publication Years