Paper
11 March 2002 Using high-resolution (0.13 μm) UV-based reticle inspection for CD uniformity in incoming quality control
Author Affiliations +
Abstract
The paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ArisTM21i die-to-database mask inspection system, for mask process control and incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by baselining it with CD measurements. Masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared. The results are presented. In addition, a case, where LBM identified a killer CD variation during IQC is presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernesto Villa, Emanuele Baracchi, Anja Rosenbusch, Michael M. Har-zvi, and Gidon Gottlib "Using high-resolution (0.13 μm) UV-based reticle inspection for CD uniformity in incoming quality control", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458308
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KEYWORDS
Photomasks

Critical dimension metrology

Inspection

Semiconducting wafers

Reticles

Control systems

Reliability

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