Paper
19 October 2001 1.3-μm GaInNAs/GaAs quantum well lasers and photodetectors
Zhong Pan, Yaowang Lin, Lianhe Li, Yinqiang Xu, Wei Zhang, Rong Han Wu
Author Affiliations +
Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444943
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
The growth of GaInNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 (m at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 (m GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhong Pan, Yaowang Lin, Lianhe Li, Yinqiang Xu, Wei Zhang, and Rong Han Wu "1.3-μm GaInNAs/GaAs quantum well lasers and photodetectors", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444943
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KEYWORDS
Quantum wells

Photodetectors

Plasma

Chemical species

Gallium arsenide

Semiconductor lasers

Annealing

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