In-situ x-ray reflectivity measurement of the interface roughness of tantalum pentoxide thin film during rf magnetron sputtering deposition

Chih-Hao Lee; Tzu-Wen Huang; Hsin-Yi Lee; Yung-Wei Hsieh

doi:10.1117/12.469629

7 June 2002 In-situ x-ray reflectivity measurement of the interface roughness of tantalum pentoxide thin film during rf magnetron sputtering deposition

Chih-Hao Lee, Tzu-Wen Huang, Hsin-Yi Lee, Yung-Wei Hsieh

Author Affiliations +

Proceedings Volume 4703, Nondestructive Evaluation and Reliability of Micro- and Nanomaterial Systems; (2002) https://doi.org/10.1117/12.469629
Event: NDE For Health Monitoring and Diagnostics, 2002, San Diego, California, United States

Abstract

The real time change of surface morphology during the RF magnetron sputtering Ta₂O₅ films on Si substrates was studied by the fixed angle X-ray reflectivity measurement. During the early stage of polycrystalline Ta₂O₅ growth, the surface roughness change reveals a surface morphology of island nucleation and island coalescence processes. After the thickness of 7 nm, the surface roughness increases up to more than 2 nm at the thickness of 80 nm. For crystalline Ta₂O₅ films, the density of the sputtering Ta₂O₅ films was also increased and reaches the value of bulk value only when the thin film thicker than 80 nm. For the amorphous sputtering film, the surface roughness is smoother and density is smaller.

Citation Download Citation

Chih-Hao Lee, Tzu-Wen Huang, Hsin-Yi Lee, and Yung-Wei Hsieh "In-situ x-ray reflectivity measurement of the interface roughness of tantalum pentoxide thin film during rf magnetron sputtering deposition", Proc. SPIE 4703, Nondestructive Evaluation and Reliability of Micro- and Nanomaterial Systems, (7 June 2002); https://doi.org/10.1117/12.469629

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