Development of mask-making process for CLM manufacturing technology

Jin-Hyung Park; Dong-Hoon Chung; Man-Ki Lee; In-Kyun Shin; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn; J. Fung Chen; Douglas J. Van Den Broeke

doi:10.1117/12.476959

1 August 2002 Development of mask-making process for CLM manufacturing technology

Jin-Hyung Park, Dong-Hoon Chung, Man-Ki Lee, In-Kyun Shin, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn, J. Fung Chen, Douglas J. Van Den Broeke

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476959
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

The extension of KrF lithography has become the major trend in semiconductor manufacturing due to the delay of ArF lithography. Therefore, various resolution enhancement techniques (RETS) are employed for sub 100nm node patterning. This paper introduces the 100 percent transmission PSM as a candidate for resolving the problems with previous approaches using a transparent phase-shift mask. CLM shows a high optical performance and relatively simple mask fabrication compare to other strong phase-shift mask. However, full-chip level CLM application is still under development due to the difficulty of mask manufacturing and lack of proper layout converting environment. In this paper, we covered mask-making process such as the quartz dry etch and defect engineering which are critical to CLM manufacturing. We made a test mask based on the basic CLM concept and evaluated its optical performance. Finally, we will show the feasibility of chrome-less mask manufacturing for real device application.

Citation Download Citation

Jin-Hyung Park, Dong-Hoon Chung, Man-Ki Lee, In-Kyun Shin, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn, J. Fung Chen, and Douglas J. Van Den Broeke "Development of mask-making process for CLM manufacturing technology", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476959

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