Local measurement of optically induced photocurrent in semiconductor structures

Marketa Benesova; Pavel Dobis; Pavel Tomanek; Nadezda Uhdeova

doi:10.1117/12.498656

8 July 2003 Local measurement of optically induced photocurrent in semiconductor structures

Marketa Benesova, Pavel Dobis, Pavel Tomanek, Nadezda Uhdeova

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498656
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Citation Download Citation

Marketa Benesova, Pavel Dobis, Pavel Tomanek, and Nadezda Uhdeova "Local measurement of optically induced photocurrent in semiconductor structures", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498656

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