Electrical validation of resolution enhancement techniques

Kunal N. Taravade; Neal P. Callan; Ebo H. Croffie; Aftab Ahmad

doi:10.1117/12.485275

2 July 2003 Electrical validation of resolution enhancement techniques

Kunal N. Taravade, Neal P. Callan, Ebo H. Croffie, Aftab Ahmad

Proceedings Volume 5043, Cost and Performance in Integrated Circuit Creation; (2003) https://doi.org/10.1117/12.485275
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

A number of techniques are used for resolution enhancement in leading edge lithography. As feature dimensions shrink, these resolution enhancement techniques (RETs) become more aggressive, causing huge increases in data volume, complexity and write time. The results of these techniques are verified using methods such as SEM measurements of resist or etched structures on the wafer. These RETs tend to either over or under-compensate by way of the suggested corrections or enhancements with respect to the actual device operation. In addition, the systematic and random metrology errors inherent in wafer level top-down SEM measurements become more significant as feature sizes shrink and tolerances become tighter. These errors further cloud the decision as to which RET is most suitable and necessary. To overcome these problems, we have designed an electrical test vehicle which targets those geometries most prevalent in the cells for a given technology. Electrical test (E-test) structures are then varied around these geometries covering the design rule space. Device parameters are measured over this design space for various RETs. This method reconciles the accuracy or effectiveness of RET models using electrical device parameters and uses the same to choose the RET which results in the lowest NRE while at the same time meeting all electrical requirements.

Citation Download Citation

Kunal N. Taravade, Neal P. Callan, Ebo H. Croffie, and Aftab Ahmad "Electrical validation of resolution enhancement techniques", Proc. SPIE 5043, Cost and Performance in Integrated Circuit Creation, (2 July 2003); https://doi.org/10.1117/12.485275

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