Paper
12 May 2003 A theory for Hooge's equation based on temperature fluctuations
Author Affiliations +
Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.496966
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
Hooge'e empirical equation has been widely used to describe l/f or flicker noise in electron devices, where the characteristics of different devices are represented by Hooge's parameter. There have been various explanations for l/f noise and theories used to calculate Hooge's parameter. We present here an alternative interpretation of Hooge's empirical equation based on temperature fluctuations in electron devices. The concept of temperature fluctuations about a steady state equilibrium value is not only expected but in itself not new, temperature is only an average value. We employ a detailed balance description of heat flux to and from a heat sink and frequency dependent solutions to the diffusion equation where the high frequency variations are strongly attenuated to describe these temperature fluctuations. This method follows our previous treatment of temperature fluctuations and noise in electron devices with high power dissipation by transmission line techniques. Temperature variations even with very low power dissipation and at thermal equilibrium can modulate the conductivity of semiconductor layers and channel's of JFET's and HEMT's. A description of Hooge's empirical equation is given by these temperature fluctuations and Hooge's parameter is shown to be simply related to the ratio of the total number of conduction electrons and total number of atoms in the sample. This new, simple and practical understand of l/f noise suggests that appropriate heat sinks are required to minimize l/f noise and consequently phase noise and timing jitter in high frequency and high speed electronic systems.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonard Forbes "A theory for Hooge's equation based on temperature fluctuations", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.496966
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KEYWORDS
Diffusion

Electrons

Heat flux

Resistors

Chemical species

Field effect transistors

Lawrencium

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