Design of possible structures of nitride vertical-cavity surface-emitting lasers

Pawel Mackowiak; T. Czyszanowski; Robert P. Sarzala; M. Wasiak; Wlodzimierz Nakwaski

doi:10.1117/12.519746

22 October 2003 Designing of possible structures of nitride vertical-cavity surface-emitting lasers

Pawel Mackowiak, T. Czyszanowski, Robert P. Sarzala, M. Wasiak, Wlodzimierz Nakwaski

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519746
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Performance of various possible designs of 400-nm nitride vertical-cavity surface-emitting lasers (VCSELs) has been analysed with the aid of the advanced three-dimensional (3D) thermal-electrical-optical-gain self-consistent threshold simulation. It has been demonstrated that it is practically impossible to reach the fundamental-mode operation in nitride VCSELs of the traditional design with two ring contacts. To enhance this desired operation, uniformity of current injection into VCSEL active regions should be dramatically improved. Therefore, we focused our research on designs with tunnel junctions and/or a semitransparent contact. In particular, it has been proved that the design with two cascading active regions, two tunnel junctions and a semitransparent contact may offer the most promising room-temperature performance characteristics for both pulse and continuous-wave operation. In particular, this design offers high mode selectivity with distinct fundamental transverse mode domination. Our simulations reveal, that the thickness and localization of a semitransparent contact as well as localization of active regions and tunnel junctions are crucial for a successful construction designing.

Citation Download Citation

Pawel Mackowiak, T. Czyszanowski, Robert P. Sarzala, M. Wasiak, and Wlodzimierz Nakwaski "Designing of possible structures of nitride vertical-cavity surface-emitting lasers", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519746

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