Paper
28 May 2004 Selective growth of oriented carbon nanotubes
Sergey A. Gavrilov, N. N. Dzbanovsky, V. V. Dvorkin, E. A. Il'ichev, B. K. Medvedev, Eduard A. Poltoratsky, G. S. Rychkov, Nikolay V. Suetin
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557977
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Two different ways of oriented carbon nanotube (CNT) selective growth are investigated. At first, template assisted vertical oriented CNT formation is used. We developed a process of individual (isolated) CNT growth in porous anodic alumina at position determined by nanoimprinting. Additionally a new fabrication method of planar nanoelements based on carbon nanotubes is described. The prototypes of nanoelements using an autoemission are designed and experimentally realized. Obtained electric field thresholds are less than 3V/μm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey A. Gavrilov, N. N. Dzbanovsky, V. V. Dvorkin, E. A. Il'ichev, B. K. Medvedev, Eduard A. Poltoratsky, G. S. Rychkov, and Nikolay V. Suetin "Selective growth of oriented carbon nanotubes", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557977
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KEYWORDS
Carbon nanotubes

Scanning electron microscopy

Aluminum

Diodes

Dielectrics

Electrodes

Manufacturing

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