Improvement of develop loading effect in the FEP-171 process

Tae-Joong Ha; Young-Mo Lee; Bo Kyung Choi; Yongkyoo Choi; Oscar Han

doi:10.1117/12.557709

20 August 2004 Improvement of develop loading effect in the FEP-171 process

Tae-Joong Ha, Young-Mo Lee, Bo Kyung Choi, Yongkyoo Choi, Oscar Han

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557709
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

CD control of FEP-171 is difficult due to abnormal CD variation in single puddle development. Fogging analysis patterns show that space CD in large open region is smaller than that in small open region. That is caused by develop loading effect, which is largely affected by developer dispensing condition in single puddle method. Double puddle development improves the abnormal CD trend and has a good CD uniformity (3sigma 5.4nm). Contrary to FEP-171, abnormal CD trend is not observed in UV-82(CAR). The low dissolution rate of FEP-171 is the cause of the abnormal CD trend. The yield of CD uniformity and MTT increases with applying double puddle method to FEP-171 process.

Citation Download Citation

Tae-Joong Ha, Young-Mo Lee, Bo Kyung Choi, Yongkyoo Choi, and Oscar Han "Improvement of develop loading effect in the FEP-171 process", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557709

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