Paper
12 May 2005 Characterization of ArF immersion process for production (Invited Paper)
Jeng-Horng Chen, Li-Jui Chen, Tun-Ying Fang, Tzung-Chi Fu, Lin-Hung Shiu, Yao-Te Huang, Norman Chen, Da-Chun Oweyang, Ming-Che Wu, Shih-Che Wang, John C.H. Lin, Chun-Kuang Chen, Wei-Ming Chen, Tsai-Sheng Gau, Burn J. Lin, Richard Moerman, Wendy Gehoel-van Ansem, Eddy van der Heijden, Fred de Jong, Dorothe Oorschot, Herman Boom, Martin Hoogendorp, Christian Wagner, Bert Koek
Author Affiliations +
Abstract
ArF immersion lithography is essential to extend optical lithography. In this study, we characterized the immersion process on production wafers. Key lithographic manufacturing parameters, overlay, CD uniformity, depth of focus (DOF), optical proximity effects (OPE), and defects are reported. Similar device electrical performance between the immersion and the dry wafers assures electrical compatibility with immersion lithography. The yield results on 90-nm Static Random Access Memory (SRAM) chips confirm doubling of DOF by immersion as expected. Poly images of the 65-nm node from a 0.85NA immersion scanner are also shown.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeng-Horng Chen, Li-Jui Chen, Tun-Ying Fang, Tzung-Chi Fu, Lin-Hung Shiu, Yao-Te Huang, Norman Chen, Da-Chun Oweyang, Ming-Che Wu, Shih-Che Wang, John C.H. Lin, Chun-Kuang Chen, Wei-Ming Chen, Tsai-Sheng Gau, Burn J. Lin, Richard Moerman, Wendy Gehoel-van Ansem, Eddy van der Heijden, Fred de Jong, Dorothe Oorschot, Herman Boom, Martin Hoogendorp, Christian Wagner, and Bert Koek "Characterization of ArF immersion process for production (Invited Paper)", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.602025
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Cited by 9 scholarly publications.
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KEYWORDS
Semiconducting wafers

Scanners

Immersion lithography

Particles

Lithography

Overlay metrology

Prototyping

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