Oxide etch rate estimation using plasma impedance monitoring

Daniel Tsunami; James McNames; Bruce Whitefield; Paul Rudolph; Jeff Zola

doi:10.1117/12.599997

17 May 2005 Oxide etch rate estimation using plasma impedance monitoring

Daniel Tsunami, James McNames, Bruce Whitefield, Paul Rudolph, Jeff Zola

Proceedings Volume 5755, Data Analysis and Modeling for Process Control II; (2005) https://doi.org/10.1117/12.599997
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The oxide etch rate of a single chamber of plasma etch tool is estimated from plasma impedance data collected during the etch process. The etch rate is estimated using a linear statistical model and etch rate measurements performed on special test wafers. Stepwise regression is used to select possible predictors from a large pool of summary statistics calculated from the plasma impedance waveforms. The relationship of the estimated mean etch rate to yield and potential yield optimization is explored. An example application of an advanced process controller to optimize the yield of the wafers processed by the etch tool in the presence of varying chamber conditions is also presented.

Citation Download Citation

Daniel Tsunami, James McNames, Bruce Whitefield, Paul Rudolph, and Jeff Zola "Oxide etch rate estimation using plasma impedance monitoring", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); https://doi.org/10.1117/12.599997

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