Paper
24 March 2006 Macro analysis of line edge and line width roughness
Jangho Shin, Jinyoung Yoon, Youngjae Jung, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon
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Abstract
Line edge and line width roughness (LER/LWR) is commonly estimated by standard deviation sigma. Since the standard deviation is a function of sample line length L, the behavior of sigma(L) curve is characterized by the correlation length and roughness exponent. In this paper, an efficient and practical macro LER/LWR analysis is implemented by characterizing an arbitrary array of similar features within a single CD-SEM image. A large amount of statistical data is saved from a single scan image. As a result, it reports full LER/LWR information including correlation length, roughness exponent, sigma at infinite line length, and power spectrum. Off-line, in-house software is developed for automated investigation, and it is successfully evaluated against various patterns. Starting with the detailed description of the algorithm, experimental results are discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jangho Shin, Jinyoung Yoon, Youngjae Jung, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, and Joo-Tae Moon "Macro analysis of line edge and line width roughness", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520X (24 March 2006); https://doi.org/10.1117/12.655516
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Line width roughness

Photoresist materials

Software development

Edge roughness

Critical dimension metrology

Polarization

Transistors

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