PMJ 2006 panel discussion review: Mask technologies for EUVL

Minoru Sugawara; Hisatake Sano

doi:10.1117/12.693287

20 October 2006 PMJ 2006 panel discussion review: Mask technologies for EUVL

Minoru Sugawara, Hisatake Sano

Proceedings Volume 6349, Photomask Technology 2006; 63492F (2006) https://doi.org/10.1117/12.693287
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

This is a report on a panel discussion in Photomask Japan held on April 19, 2006. We discussed mask technologies for extreme ultraviolet lithography (EUVL). Seven panelists presented their views on critical issues in the production of practical EUV masks. The wrap-up is as follows: A local polishing method has yielded an average flatness of 70 nm, but it increases both surface roughness and defect density. Regarding defect density, the large gap between the target and the one expected from the learning curve led to the proposal of realistic (i.e., relaxed) specifications for flatness and defect density. The capability of detecting defects with a PSL equivalent size of 25 nm or less remains an issue. It was also suggested that the local slope of the back surface of blanks (masks) should be standardized. Mask patterning has already been demonstrated to be sufficient for the 32-nm half pitch node. Captive and commercial mask shops are ready to provide masks for full-field exposure tools. Regarding handling and shipping, dual-pod type carriers and robotic handling have been demonstrated to adequately protect masks from particle contamination. Finally, a 3-point support method in EB writing was examined in conjunction with a new EB correction scheme.

Citation Download Citation

Minoru Sugawara and Hisatake Sano "PMJ 2006 panel discussion review: Mask technologies for EUVL", Proc. SPIE 6349, Photomask Technology 2006, 63492F (20 October 2006); https://doi.org/10.1117/12.693287

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