Predicting electrical measurements by applying scatterometry to complex spacer structures

Matthew Sendelbach; Javier Ayala; Pedro Herrera

doi:10.1117/12.714870

5 April 2007 Predicting electrical measurements by applying scatterometry to complex spacer structures

Matthew Sendelbach, Javier Ayala, Pedro Herrera

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 651825 (2007) https://doi.org/10.1117/12.714870
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

The comparison of scatterometry measurements of complex spacer structures to electrical test measurements is discussed. Details of the NFET and PFET structures are presented, along with a summary of the scatterometry models used to represent the structures. Before comparison data are shown, a methodology and set of metrics are presented that assist in the analysis and interpretation of comparison data. The methodology, called Prediction Analysis, has its roots in TMU analysis, where both measurements are subject to error. But in Prediction Analysis, an "apples-to-apples" comparison of the measurements is not the goal, and the measurements may be reported in different units. The goal of Prediction Analysis is to analyze the components of error in a correlation and use this analysis to predict a measurement based on the knowledge of another measurement, such that the predicted measurement is bounded. This method is used in this work to determine how well scatterometry measurements of certain parameters correlate to electrical measurements of gate resistance, gate Lpoly, and transistor current Ion. Clear correlations are demonstrated, and physical explanations that explain these correlations are presented. Due to the correlations, the scatterometry measurements can be used as a predictor of electrical performance significantly before the electrical test occurs. Because of this, scatterometry can be a reliable measurement technique for improving spacer controls and reducing the mean time to detect (MTTD) some profile abnormalities.

Citation Download Citation

Matthew Sendelbach, Javier Ayala, and Pedro Herrera "Predicting electrical measurements by applying scatterometry to complex spacer structures", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651825 (5 April 2007); https://doi.org/10.1117/12.714870

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