Paper
15 May 2007 Application of EB repair tool for 45-nm generation photomasks
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Abstract
Although photomask defect repair tools based on FIB, AFM and pulsed laser are mainly used in current production lines, there is a possibility they will not meet the requirements of 45nm generation photomasks. The EB repair tool is one of the candidates that has a possibility of meeting those requirements. The EB repair tool, MeRiT-MGTM, has already been announced by Carl Zeiss GmbH. The basic performance of this tool has been reported.1) Recently MoSi mask is most commonly used in leading edge devices, and defects are mainly opaque type. For this reason, the performance of EB-repair tool for MoSi etching should be investigated. In this paper, we will report the evaluation results of MeRiT-MGTM and consider whether this tool has a possibility of meeting the requirements of 45nm generation photomasks. In order to evaluate the performance of MeRiT-MGTM, we prepared 180nm half pitch line & space pattern of ArFatt. PSM with programmed defects. These programmed defects are not only simple extrusion shape but also of various shapes and sizes. By using these defects, we made practical experiment which would happen in real production line.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shingo Kanamitsu, Keiko Morishita, and Takashi Hirano "Application of EB repair tool for 45-nm generation photomasks", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072M (15 May 2007); https://doi.org/10.1117/12.729005
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KEYWORDS
Etching

Photomasks

Scanning electron microscopy

Transmittance

Atomic force microscopy

Image resolution

Semiconducting wafers

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