Paper
30 October 2007 EUV mask process development using DUV inspection system
David Kim, Venu Vellanki, William Huang, Andrew Cao, Chunlin Chen, Aditya Dayal, Paul Yu, Ki Hun Park, Yumiko Maenaka, Kazuko Jochi, Gregg Inderhees
Author Affiliations +
Abstract
As the design rule continues to shrink towards 3x nm and below, lithographers are searching for new and advanced methods of mask lithography such as immersion, double patterning and extreme ultraviolet lithography (EUVL). EUV lithography is one of the leading candidates for the next generation lithography technologies after 193 nm immersion and many mask makers and equipment makers have focused on stabilizing the process. With EUV lithography just around the corner, it is crucial for advanced mask makers to develop and stabilize EUV mask processes. As a result, an inspection tool is required to monitor and provide quick feedback to each process step.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Kim, Venu Vellanki, William Huang, Andrew Cao, Chunlin Chen, Aditya Dayal, Paul Yu, Ki Hun Park, Yumiko Maenaka, Kazuko Jochi, and Gregg Inderhees "EUV mask process development using DUV inspection system", Proc. SPIE 6730, Photomask Technology 2007, 67305M (30 October 2007); https://doi.org/10.1117/12.747163
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Inspection

Extreme ultraviolet

Photomasks

Extreme ultraviolet lithography

Cameras

Deep ultraviolet

Etching

RELATED CONTENT

Impact of an etched EUV mask black border on imaging...
Proceedings of SPIE (November 08 2012)
Combined absorber stack for optimization of the EUVL mask
Proceedings of SPIE (March 23 2006)
EUV mask making an approach based on the direct...
Proceedings of SPIE (December 17 2003)
Black border with etched multilayer on EUV mask
Proceedings of SPIE (June 29 2012)

Back to Top