Through-focus pattern matching applied to double patterning

Juliet Rubinstein; Andrew R. Neureuther

doi:10.1117/12.814190

16 March 2009 Through-focus pattern matching applied to double patterning

Proceedings Volume 7274, Optical Microlithography XXII; 72741A (2009) https://doi.org/10.1117/12.814190
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

A fast-CAD method for evaluating through-focus interaction among features is developed based on dual layout convolution kernels derived and tested for accuracy in predicting intensity changes. The model is derived by extending the Taylor series expansion for OPD to include a quadratic term, resulting in not only the usual pattern match factor Z₃ for defocus, but also match factors for Z₀ and Z₈. The model is tested through-focus on a logic layout and the predicted intensity change versus the actual intensity change through-focus is graphed. Results for basic case near coherent illumination show an R² of 0.92. Generalization to use only two patterns instead of three is shown to work well for line ends, with an R² of 0.96.

Citation Download Citation

Juliet Rubinstein and Andrew R. Neureuther "Through-focus pattern matching applied to double patterning", Proc. SPIE 7274, Optical Microlithography XXII, 72741A (16 March 2009); https://doi.org/10.1117/12.814190

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