Prof. Andrew R. Neureuther Profile

Prof. Andrew R. Neureuther

Professor Emeritus at Univ of California Berkeley

SPIE Involvement:

Author | Instructor

Publications (223)

Proceedings Article | 10 April 2024 Presentation

Characterization of chemical/structural information of latent image via critical-dimension resonant soft x-ray scattering

Qi Zhang, Weilun Chao, Warren Holcomb, Ryan Miyakawa, Dinesh Kumar, Ricardo Ruiz, Andrew Neureuther, Patrick Naulleau, Cheng Wang

Proceedings Volume 12955, 129550A (2024) https://doi.org/10.1117/12.3010967

KEYWORDS: Scattering, X-rays, X-ray imaging, X-ray characterization, Photoresist materials, X-ray sources, Data modeling, Light scattering, Laser scattering, Extreme ultraviolet lithography

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Proceedings Article | 22 November 2023 Poster

Metrology development on latent images via critical-dimension resonant soft x-ray scattering

Qi Zhang, Weilun Chao, Warren Holcomb, Ryan Miyakawa, Ricardo Ruiz, Dinesh Kumar, Andrew Neureuther, Patrick Naulleau, Cheng Wang

Proceedings Volume PC12750, PC1275012 (2023) https://doi.org/10.1117/12.2689943

KEYWORDS: Scattering, X-rays, X-ray imaging, Metrology, Systems modeling, X-ray sources, X-ray characterization, Time metrology, Spatial resolution, Simulations

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Proceedings Article | 1 December 2022 Presentation + Paper

Spatially resolved dissolution monitoring using AFM

Luke Long, Jiajun Chen, Andrew Neureuther, Patrick Naulleau, Paul Ashby

Proceedings Volume 12292, 1229206 (2022) https://doi.org/10.1117/12.2643273

KEYWORDS: Photoresist developing, Photoresist materials, Line edge roughness, Photoresist processing, Atomic force microscopy, Water, Raster graphics, Electronic filtering, Liquids, Image processing

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Proceedings Article | 1 December 2022 Presentation + Paper

Diagnosing phenomena that influence missing contacts and pillars

Andrew Neureuther, Luke Long, Greg Wallraff, Patrick Naulleau

Proceedings Volume 12292, 122920H (2022) https://doi.org/10.1117/12.2643289

KEYWORDS: Diffusion, Stochastic processes, Polymers, Metals, Oxides, Error analysis, Absorption, Extreme ultraviolet lithography, Data modeling, Printing

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Proceedings Article | 13 June 2022 Presentation

EUV phase scatterometry with linearized rigorous scattering

Stuart Sherwin, Ryan Miyakawa, Eric Gullikson, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume PC12051, PC1205109 (2022) https://doi.org/10.1117/12.2617291

KEYWORDS: Scattering, Scatterometry, Extreme ultraviolet, Thin films, Reflectometry, Reflectivity, Phase measurement, Optical lithography, Metrology, Maxwell's equations

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SPIE Journal Paper | 12 August 2021

Picometer sensitivity metrology for EUV absorber phase

Stuart Sherwin, Isvar Cordova, Ryan Miyakawa, Markus Benk, Laura Waller, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 20, Issue 03, 031011, (August 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.031011

KEYWORDS: Contamination, Multilayers, Reflectivity, Extreme ultraviolet, Reflection, Metrology, Etching, Carbon, Modulation, Phase shift keying

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SPIE Journal Paper | 2 July 2021 Open Access

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Luke Long, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 20, Issue 03, 034601, (July 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.034601

KEYWORDS: 3D modeling, Etching, Photoresist materials, Extreme ultraviolet lithography, Diffusion, Photoresist developing, Stochastic processes, Data modeling, Photoresist processing, Performance modeling

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Proceedings Article | 1 April 2021 Presentation + Paper

Modeling stochastic effects of exposure/diffusion and dissolution on missing contacts

Andrew Neureuther, Luke Long, Patrick Naulleau

Proceedings Volume 11609, 1160914 (2021) https://doi.org/10.1117/12.2583860

KEYWORDS: Stochastic processes, Optical spheres, Roads, Data modeling, Visualization, Printing, Nanofabrication, Extreme ultraviolet lithography, Diffusion

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Proceedings Article | 9 March 2021 Presentation + Paper

Measuring EUV mask 3D effects with hyperspectral Zernike phase contrast

Stuart Sherwin, Ryan Miyakawa, Markus Benk, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11609, 116090B (2021) https://doi.org/10.1117/12.2587211

KEYWORDS: Photomasks, Extreme ultraviolet, Reflection, Phase contrast, 3D image processing, Multilayers, Phase shifts, Zone plates, Reflectivity, Optical lithography

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Proceedings Article | 22 February 2021 Presentation + Paper

3D modeling of EUV photoresist using the multivariate Poisson propagation model

Luke Long, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11609, 116091C (2021) https://doi.org/10.1117/12.2589532

KEYWORDS: 3D modeling, Photoresist materials, Extreme ultraviolet lithography, Photoresist developing, Lithography, Semiconducting wafers, Roads, Optical lithography, Materials processing, High volume manufacturing

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Proceedings Article | 22 February 2021 Presentation

Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations

Jonathan Ma, Patrick Naulleau, David Prendergast, Andrew Neureuther

Proceedings Volume 11609, 116091B (2021) https://doi.org/10.1117/12.2588731

KEYWORDS: Chemistry, Line edge roughness, Extreme ultraviolet, Tin, Resistance, Optical lithography, Metals, Ionizing radiation, Ionization, Etching

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Proceedings Article | 23 October 2020 Presentation + Paper

Picometer sensitivity metrology for EUV absorber phase

Stuart Sherwin, Isvar Cordova, Ryan Miyakawa, Markus Benk, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11517, 1151707 (2020) https://doi.org/10.1117/12.2574759

KEYWORDS: Extreme ultraviolet, Phase shifts, Multilayers, Image quality, Destructive interference, Constructive interference, Light scattering, Printing, Image processing, Reflectometry

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Proceedings Article | 20 September 2020 Presentation

Image denoising for electron beam metrology

Luke Long, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11517, 115170L (2020) https://doi.org/10.1117/12.2575243

KEYWORDS: Electron beams, Metrology, Image denoising, Stochastic processes, 3D modeling, Extreme ultraviolet, Line edge roughness, Line width roughness, Photomicroscopy, Eye models

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Proceedings Article | 20 September 2020 Presentation

Engineering resist-substrate interface: a quantum chemistry study of self-assembled monolayers

Jonathan Ma, Isvar Cordova, Rudy Wojtecki, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11517, 115170H (2020) https://doi.org/10.1117/12.2574879

KEYWORDS: Self-assembled monolayers, Chemistry, Interfaces, Extreme ultraviolet, Electrons, Chemical reactions, Extreme ultraviolet lithography, Deep ultraviolet, New and emerging technologies, Lithography

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SPIE Journal Paper | 27 August 2020 Open Access

Investigating extreme ultraviolet radiation chemistry with first-principles quantum chemistry calculations

Jonathan Ma, Han Wang, David Prendergast, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 19, Issue 03, 034601, (August 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.3.034601

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Proceedings Article | 8 April 2020 Presentation + Paper

Excitation selectivity in model tin-oxo resist: a computational chemistry perspective

Jonathan Ma, Han Wang, David Prendergast, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11323, 113231F (2020) https://doi.org/10.1117/12.2553055

KEYWORDS: Chemistry, Ionization, Chemical species, Tin, Molecules, Extreme ultraviolet, Absorption, Metals, Quantum efficiency, Photochemistry

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Proceedings Article | 24 March 2020 Paper

Algebraic model for extremely unlikely resist dissolution events

Andrew Neureuther, Luke Long, Patrick Naulleau

Proceedings Volume 11326, 1132607 (2020) https://doi.org/10.1117/12.2553048

KEYWORDS: Extreme ultraviolet lithography, Statistical modeling, Printing, Error analysis, Stochastic processes, Data modeling, Inspection, Photoresist materials

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Proceedings Article | 23 March 2020 Presentation + Paper

Quantitative phase retrieval for EUV photomasks

Stuart Sherwin, Isvar Cordova, Ryan Miyakawa, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11323, 1132315 (2020) https://doi.org/10.1117/12.2552967

KEYWORDS: Scatterometry, Reflectometry, Photomasks, Scattering, Diffraction, Extreme ultraviolet, Reflectivity, Phase retrieval, Multilayers, 3D modeling

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Proceedings Article | 23 March 2020 Presentation + Paper

Measurement of latent image in resist using scanning probe techniques

Luke Long, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11323, 113231C (2020) https://doi.org/10.1117/12.2552399

KEYWORDS: Atomic force microscopy, Scanning electron microscopy, Photoresist materials, Line width roughness, Chemistry, Stochastic processes, Diffusion, Edge roughness, Photoresist processing, Critical dimension metrology

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Proceedings Article | 20 November 2019 Presentation + Paper

Investigating EUV radiation chemistry with first principle quantum chemistry calculations

Jonathan Ma, Han Wang, David Prendergast, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11147, 111470X (2019) https://doi.org/10.1117/12.2538558

KEYWORDS: Electrons, Chemistry, Extreme ultraviolet, Molecules, Ionization, Quantum efficiency, Extreme ultraviolet lithography, Absorption, Polymers, Phase measurement

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Proceedings Article | 11 November 2019 Paper

Measuring the Phase of EUV Photomasks

Stuart Sherwin, Isvar Cordova, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 11147, 111471F (2019) https://doi.org/10.1117/12.2538107

KEYWORDS: Extreme ultraviolet, Phase imaging, Photomasks, Optical design, Zone plates, Phase measurement, Computational imaging, Charge-coupled devices, CCD image sensors, CMOS sensors

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Proceedings Article | 30 May 2019 Paper

Investigating EUV radiochemistry with condensed phase photoemission

Jonathan Ma, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10957, 109571Y (2019) https://doi.org/10.1117/12.2520391

KEYWORDS: Electrons, Scattering, Extreme ultraviolet, Monte Carlo methods, Photoresist materials, Photoemission spectroscopy, Chemistry, Extreme ultraviolet lithography, Plasmons, Light sources

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Proceedings Article | 26 March 2019 Presentation + Paper

Advanced multilayer mirror design to mitigate EUV shadowing

Stuart Sherwin, Laura Waller, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10957, 1095715 (2019) https://doi.org/10.1117/12.2515095

KEYWORDS: Mirrors, Reflectivity, Extreme ultraviolet, Near field optics, Reflection, Diffraction, Spatial frequencies, Semiconducting wafers, Photomasks, Near field

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Proceedings Article | 25 March 2019 Presentation + Paper

Modeling of novel resist technologies

Luke Long, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10960, 1096011 (2019) https://doi.org/10.1117/12.2515144

KEYWORDS: Quantum efficiency, Line width roughness, Ultraviolet radiation, Stochastic processes, Line edge roughness, Extreme ultraviolet lithography, Diffusion, Extreme ultraviolet

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Proceedings Article | 3 October 2018 Presentation + Paper

Measurement and modeling of diffusion characteristics in EUV resist

Luke Long, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10809, 108090B (2018) https://doi.org/10.1117/12.2502226

KEYWORDS: Diffusion, Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Polymers, Electron beams, Data modeling, Scanning electron microscopy

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Proceedings Article | 3 October 2018 Presentation + Paper

EUV mask characterization with actinic scatterometry

Stuart Sherwin, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10809, 108090T (2018) https://doi.org/10.1117/12.2501970

KEYWORDS: Extreme ultraviolet, Photomasks, Scatterometry, Diffraction, Associative arrays, Mirrors, Diffraction gratings, Neural networks, Reflectivity, Tolerancing

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Proceedings Article | 19 March 2018 Presentation + Paper

Actinic EUV scatterometry for parametric mask quantification

Stuart Sherwin, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10583, 105831G (2018) https://doi.org/10.1117/12.2299271

KEYWORDS: Photomasks, Extreme ultraviolet, 3D modeling, Mirrors, Reflection, Light scattering, Deep ultraviolet, Scatterometry, Diffraction, Scattering

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SPIE Journal Paper | 9 December 2017 Open Access

Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks

Stuart Sherwin, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 16, Issue 04, 041012, (December 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041012

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Finite-difference time-domain method, Diffraction, Printing, Reflectivity, Extreme ultraviolet lithography, SRAF, Phase shifts

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Proceedings Article | 16 October 2017 Presentation

Actinic EUV scatterometry for parametric mask quantification (Conference Presentation)

Stuart Sherwin, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10450, 104500R (2017) https://doi.org/10.1117/12.2281511

KEYWORDS: Photomasks, Extreme ultraviolet

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In DUV lithography, scatterometry enables precise measurement of mask dimensions such as the pitch, linewidth, and sidewall-angle of periodic patterns. However, substantial differences in the optical properties of DUV and EUV masks, such as angular sensitivity and mask 3D effects, makes simply extending existing technologies difficult. Using the EUV reflectometer at Lawrence Berkeley National Labs Center for X-Ray Optics with tunable wavelength and illumination angle, we explore how to extend scatterometry to EUV masks, with particular emphasis on using rigorous simulations and experimental data to quantify the accuracy of sensitive measurements such as sidewall-angle. Mask scatterometry at EUV wavelengths has benefits but also poses challenges that are not present at DUV wavelengths. The benefits come primarily from using the same wavelength as lithography; due to the severe sensitivity of the multilayer mirror to wavelength, the diffraction patterns obtained at DUV wavelengths from EUV masks would be both highly attenuated and substantially distorted. However, stronger mask 3D effects and the sensitivity of the multilayer to angle of illumination add extra levels of complexity to modeling the spectra of EUV masks that are not present in traditional DUV masks. We use rigorous FDTD (Finite Difference Time Domain) imaging simulations of patterned EUV multilayer masks to generate a library of spectra including gratings with a range of orientations, pitches, line widths, absorber heights, and side-wall angles under a wide range of illumination wavelengths and angles. We then perform SVD-based dimensionality reduction to find an efficient representation, or dictionary, for the spectra. Using this low-dimensional dictionary, we determine the sampling requirements, i.e. which measurements (angles and wavelengths of illumination) are necessary to measure all parameters of interest to a specified accuracy. We finally acquire experimental spectra of known mask features on the EUV reflectometer using different illumination conditions, and use the dictionary to recover the underlying dimensions of the features.

Proceedings Article | 30 August 2017 Paper

Processing issues and modeling

A. Neureuther

Proceedings Volume 10320, 1032004 (2017) https://doi.org/10.1117/12.2284077

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SPIE Journal Paper | 16 May 2017 Open Access

Impact of tool design on defect detection sensitivity in extreme ultraviolet actinic blank inspection

Yow-Gwo Wang, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 16, Issue 02, 023502, (May 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.023502

KEYWORDS: Signal to noise ratio, Extreme ultraviolet, Inspection, Defect detection, Interference (communication)

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Proceedings Article | 27 March 2017 Paper

Contrast curves for low energy electron exposures of an EUV resist in a scanning electron microscope

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10143, 101432C (2017) https://doi.org/10.1117/12.2259795

KEYWORDS: Scattering, Scanning electron microscopy, Extreme ultraviolet, Monte Carlo methods, Extreme ultraviolet lithography, Electron microscopes, Chemistry, Photoresist materials, Quantum efficiency, Spectroscopy, Energy efficiency, Solids, Ranging, Chemically amplified resists, Lithography

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Proceedings Article | 24 March 2017 Presentation + Paper

Rigorous 3D electromagnetic simulation of ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask

Stuart Sherwin, Thomas Pistor, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10143, 1014317 (2017) https://doi.org/10.1117/12.2260412

KEYWORDS: Photomasks, Extreme ultraviolet, 3D modeling, Electromagnetic simulation, Optical lithography, Etching, Thin films, Extreme ultraviolet lithography

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Proceedings Article | 24 March 2017 Paper

Impact of EUV SRAF on Bossung tilt

Yow-Gwo Wang, Stephen Hsu, Robert Socha, Andy Neureuther, Patrick Naulleau

Proceedings Volume 10143, 1014320 (2017) https://doi.org/10.1117/12.2260160

KEYWORDS: SRAF, Photomasks, Extreme ultraviolet lithography, 3D image processing, Diffraction, 3D modeling, Zernike polynomials, Imaging systems, Image processing, Lithographic illumination, Critical dimension metrology

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Proceedings Article | 24 March 2017 Presentation + Paper

Impact of tool design on defect detection sensitivity for EUV actinic blank inspection

Yow-Gwo Wang, Andy Neureuther, Patrick Naulleau

Proceedings Volume 10143, 101430M (2017) https://doi.org/10.1117/12.2260193

KEYWORDS: Signal to noise ratio, Defect detection, Synchrotrons, Plasma, Optical design, Speckle, EUV optics, Defect inspection, Inspection equipment, Optical inspection, Extreme ultraviolet lithography, Optical resolution, Photomasks

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SPIE Journal Paper | 16 March 2017 Open Access

Impact of noise sources and optical design on defect detection sensitivity in extreme ultraviolet actinic pattern inspection tool

Yow-Gwo Wang, Andrew Neureuther, Patrick Naulleau

JM3, Vol. 16, Issue 01, 013504, (March 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.1.013504

KEYWORDS: Signal to noise ratio, Interference (communication), Inspection, Speckle, Extreme ultraviolet, Optical design, Cameras, Defect detection, Speckle pattern, Photomasks

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Proceedings Article | 3 October 2016 Paper

Impact of noise sources and optical design on defect sensitivity for EUV actinic pattern inspection

Yow-Gwo Wang, Andy Neureuther, Patrick Naulleau

Proceedings Volume 9985, 99850I (2016) https://doi.org/10.1117/12.2242794

KEYWORDS: Inspection, Signal to noise ratio, Extreme ultraviolet, Speckle, Interference (communication), Cameras, Optical design, Photomasks, Speckle pattern, 3D modeling

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Proceedings Article | 11 April 2016 Paper

Enhancing native defect sensitivity for EUV actinic blank inspection: optimized pupil engineering and photon noise study

Yow-Gwo Wang, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9776, 97761D (2016) https://doi.org/10.1117/12.2220277

KEYWORDS: Phase shifts, Inspection, Signal to noise ratio, Extreme ultraviolet, Phase contrast, Absorption, Interference (communication), Speckle, Apodization, Defect inspection

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Proceedings Article | 25 March 2016 Paper

Study of energy delivery and mean free path of low energy electrons in EUV resists

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9779, 97790B (2016) https://doi.org/10.1117/12.2220390

KEYWORDS: Electrons, Scattering, Extreme ultraviolet, Dielectrics, Spectroscopy, Electron microscopes, Absorption, Phonons, Data modeling, Reflectometry, Optical testing, Reflectance spectroscopy, Solids

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Proceedings Article | 9 November 2015 Paper

Absorber topography dependence of phase edge effects

Aamod Shanker, Martin Sczyrba, Brid Connolly, Laura Waller, Andy Neureuther

Proceedings Volume 9635, 96350G (2015) https://doi.org/10.1117/12.2197861

KEYWORDS: Polarization, Refractive index, Phase measurement, Near field, Absorption, Opacity, Silica, Photomasks, 193nm lithography, Semiconducting wafers, Diffraction, Phase shift keying, Critical dimension metrology, Airborne remote sensing, Finite-difference time-domain method, Panoramic photography, Binary data, Deep ultraviolet

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Proceedings Article | 3 November 2015 Paper

Examination of phase retrieval algorithms for patterned EUV mask metrology

Rene Claus, Yow-Gwo Wang, Antoine Wojdyla, Markus Benk, Kenneth Goldberg, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9635, 96350F (2015) https://doi.org/10.1117/12.2197868

KEYWORDS: Phase shifts, Phase retrieval, Photomasks, Extreme ultraviolet, Image retrieval, Metrology, Microscopes, Computer simulations, Image restoration, 3D metrology

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Proceedings Article | 28 October 2015 Paper

The study of phase effects in EUV mask pattern defects

Yow-Gwo Wang, Andy Neureuther, Patrick Naulleau

Proceedings Volume 9635, 96350D (2015) https://doi.org/10.1117/12.2197769

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Phase shifts, Defect detection, 3D modeling, Polarization, Extreme ultraviolet lithography, Reflectivity, Projection lithography, Germanium, Nickel, Neodymium, Near field, Absorption, Ions

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Proceedings Article | 6 April 2015 Paper

Simulation study of the influence of PEB reaction rates on resist LER

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9422, 94222I (2015) https://doi.org/10.1117/12.2087566

KEYWORDS: Line edge roughness, Calibration, Extreme ultraviolet, Quenching (fluorescence), Photons, Point spread functions, Stochastic processes, Data modeling, Systems modeling, Lithography

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Proceedings Article | 26 March 2015 Paper

Characterizing the dependence of thick-mask edge effects on illumination angle using AIMS images

Aamod Shanker, Martin Sczyrba, Falk Lange, Brid Connolly, Andrew Neureuther, Laura Waller

Proceedings Volume 9426, 94260O (2015) https://doi.org/10.1117/12.2087615

KEYWORDS: Photomasks, Polarization, Semiconducting wafers, Imaging systems, Printing, Spatial frequencies, Airborne remote sensing, 3D modeling, Phase retrieval, Switches

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Proceedings Article | 19 March 2015 Paper

Aberration estimation using EUV mask roughness

Rene Claus, Antoine Wojdyla, Markus Benk, Kenneth Goldberg, Andrew Neureuther, Patrick Naulleau, Laura Waller

Proceedings Volume 9422, 942214 (2015) https://doi.org/10.1117/12.2087513

KEYWORDS: Zone plates, Extreme ultraviolet, Photomasks, Microscopes, Optimization (mathematics), Ray tracing, Phase retrieval, Algorithm development, Monochromatic aberrations, Extreme ultraviolet lithography

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Proceedings Article | 16 March 2015 Paper

Enhancing defect detection with Zernike phase contrast in EUV multilayer blank inspection

Yow-Gwo Wang, Ryan Miyakawa, Weilun Chao, Markus Benk, Antoine Wojdyla, Alex Donoghue, David Johnson, Kenneth Goldberg, Andy Neureuther, Ted Liang, Patrick Naulleau

Proceedings Volume 9422, 94221C (2015) https://doi.org/10.1117/12.2087532

KEYWORDS: Signal to noise ratio, Phase contrast, Phase shifts, Apodization, Extreme ultraviolet, Inspection, Microscopes, Interference (communication), Absorption, Defect detection

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Proceedings Article | 16 March 2015 Paper

Analysis of shot noise limitations due to absorption count in EUV resists

Suchit Bhattarai, Weilun Chao, Shaul Aloni, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9422, 942209 (2015) https://doi.org/10.1117/12.2087303

KEYWORDS: Line edge roughness, Extreme ultraviolet, Absorption, Extreme ultraviolet lithography, Electron beam lithography, Plasmons, Lithography, Photons, Photomasks, Spectroscopy

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Proceedings Article | 16 March 2015 Paper

Phase measurements of EUV mask defects

Rene Claus, Yow-Gwo Wang, Antoine Wojdyla, Markus Benk, Kenneth Goldberg, Andrew Neureuther, Patrick Naulleau, Laura Waller

Proceedings Volume 9422, 942217 (2015) https://doi.org/10.1117/12.2087195

KEYWORDS: Extreme ultraviolet, Zone plates, Photomasks, Phase contrast, Phase measurement, Algorithm development, Extreme ultraviolet lithography, Microscopes, Lithography, Imaging systems

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Proceedings Article | 8 October 2014 Paper

Effect of amplitude roughness on EUV mask specifications

Rene Claus, Andrew Neureuther, Patrick Naulleau, Laura Waller

Proceedings Volume 9235, 92351A (2014) https://doi.org/10.1117/12.2069073

KEYWORDS: Line width roughness, Extreme ultraviolet, Scatterometry, Speckle, Scattering, Photomasks, Scatter measurement, Phase measurement, Monochromatic aberrations, Edge roughness

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Proceedings Article | 8 October 2014 Paper

Phase-enhanced defect sensitivity for EUV mask inspection

Yow-Gwo Wang, Ryan Miyakawa, Weilun Chao, Kenneth Goldberg, Andy Neureuther, Patrick Naulleau

Proceedings Volume 9235, 92350L (2014) https://doi.org/10.1117/12.2069291

KEYWORDS: Signal to noise ratio, Inspection, Phase shifts, Phase contrast, Photomasks, Apodization, Speckle, Extreme ultraviolet, Interference (communication), Defect inspection

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Proceedings Article | 28 July 2014 Paper

Extreme ultraviolet mask roughness: requirements, characterization, and modeling

Patrick Naulleau, Suchit Bhattaria, Rick Chao, Rene Claus, Kenneth Goldberg, Frank Goodwin, Eric Gullikson, Donggun Lee, Andy Neureuther, Jong-Ju Park

Proceedings Volume 9256, 92560J (2014) https://doi.org/10.1117/12.2070303

KEYWORDS: Photomasks, Extreme ultraviolet, Speckle, Line width roughness, Inspection, Atomic force microscopy, Lithography, Scattering, Scatter measurement, Line edge roughness

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Proceedings Article | 17 April 2014 Paper

Predicting LER PSD caused by mask roughness using a mathematical model

Rene Claus, Andrew Neureuther, Laura Waller, Patrick Naulleau

Proceedings Volume 9048, 90482X (2014) https://doi.org/10.1117/12.2046637

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Speckle, Mathematical modeling, Point spread functions, Spatial frequencies, Lithographic illumination, Extreme ultraviolet lithography, Speckle pattern

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Proceedings Article | 17 April 2014 Paper

Zernike phase contrast microscope for EUV mask inspection

Yow-Gwo Wang, Ryan Miyakawa, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9048, 904810 (2014) https://doi.org/10.1117/12.2048180

KEYWORDS: Phase contrast, Phase shifts, Apodization, Signal to noise ratio, Extreme ultraviolet, Inspection, Microscopes, Photomasks, Interference (communication), Speckle

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Proceedings Article | 17 April 2014 Paper

Limitations of resist-based characterization of EUV mask surface roughness

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9048, 904837 (2014) https://doi.org/10.1117/12.2048249

KEYWORDS: Line edge roughness, Surface roughness, Photomasks, Extreme ultraviolet, Stochastic processes, Ranging, Semiconducting wafers, Coherence (optics), Image processing, Image quality

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Proceedings Article | 17 April 2014 Paper

Comparative analysis of shot noise in EUV and e-beam lithography

Suchit Bhattarai, Weilun Chao, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9048, 90481H (2014) https://doi.org/10.1117/12.2048248

KEYWORDS: Extreme ultraviolet, Line edge roughness, Electron beam lithography, Extreme ultraviolet lithography, Point spread functions, Absorption, Binary data, Scattering, Lithography, Laser scattering

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Proceedings Article | 31 March 2014 Paper

Critical assessment of the transport of intensity equation as a phase recovery technique in optical lithography

Aamod Shanker, Martin Sczyrba, Brid Connolly, Franklin Kalk, Andy Neureuther, Laura Waller

Proceedings Volume 9052, 90521D (2014) https://doi.org/10.1117/12.2048278

KEYWORDS: Photomasks, Semiconducting wafers, Imaging systems, 3D modeling, Phase imaging, Absorption, Phase shifts, Polarization, Error analysis, Finite-difference time-domain method

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Proceedings Article | 23 September 2013 Paper

Recovering effective amplitude and phase roughness of EUV masks

Rene Claus, Iacopo Mochi, Markus Benk, Kenneth Goldberg, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 8880, 88802B (2013) https://doi.org/10.1117/12.2027828

KEYWORDS: Speckle, Extreme ultraviolet, Photomasks, Microscopes, Signal to noise ratio, Reconstruction algorithms, Monochromatic aberrations, Deposition processes, Reflectivity, Coherence (optics)

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Proceedings Article | 23 September 2013 Paper

EUV scatterometry-based measurement method for the determination of phase roughness

Rikon Chao, Eric Gullikson, Michael Goldstein, Frank Goodwin, Ranganath Teki, Andy Neureuther, Patrick Naulleau

Proceedings Volume 8880, 88801B (2013) https://doi.org/10.1117/12.2027695

KEYWORDS: Scatterometry, Photomasks, Extreme ultraviolet, Atomic force microscopy, Multilayers, Scatter measurement, Reflectivity, Coating, Surface roughness, Scattering

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Proceedings Article | 10 September 2013 Paper

Analysis of edge effects in attenuating phase-shift masks using quantitative phase imaging

Aamod Shanker, Martin Sczyrba, Brid Connolly, Andy Neureuther, Laura Waller

Proceedings Volume 8880, 88802A (2013) https://doi.org/10.1117/12.2027825

KEYWORDS: Photomasks, Polarization, Semiconducting wafers, Phase shifts, Phase imaging, Data modeling, Wafer-level optics, Imaging systems, Printing, Phase measurement

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Proceedings Article | 1 April 2013 Paper

Simulation analysis of LER and dose tradeoffs for EUV resists with photo-decomposable quenchers

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 8679, 867925 (2013) https://doi.org/10.1117/12.2012669

KEYWORDS: Line edge roughness, Diffusion, Quantum efficiency, Extreme ultraviolet, Photo decomposable quencher, Extreme ultraviolet lithography, Lithography, Stochastic processes, Printing, Line width roughness

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Proceedings Article | 1 April 2013 Paper

Experimental verification of EUV mask limitations at high numerical apertures

Rikon Chao, Paul Graeupner, Eric Gullikson, Seong-Sue Kim, Jens-Timo Neumann, Ryan Miyakawa, Hwan-Seok Seo, Andy Neureuther, Patrick Naulleau

Proceedings Volume 8679, 86791M (2013) https://doi.org/10.1117/12.2013209

KEYWORDS: Data modeling, Reflectivity, Diffraction, Photomasks, Scatter measurement, Calibration, Extreme ultraviolet, Molybdenum, Silicon, Ruthenium

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Proceedings Article | 1 April 2013 Paper

Mathematical model for calculating speckle contrast through focus

Rene Claus, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 8679, 86791Y (2013) https://doi.org/10.1117/12.2012535

KEYWORDS: Photomasks, Speckle, Convolution, Extreme ultraviolet, Semiconducting wafers, Reflectivity, Line edge roughness, Mathematical modeling, Lithography, Extreme ultraviolet lithography

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Proceedings Article | 30 June 2012 Paper

A perspective on collaborative research for emerging technologies and design

Andrew Neureuther

Proceedings Volume 8441, 84410G (2012) https://doi.org/10.1117/12.970297

KEYWORDS: Photomasks, Semiconductor manufacturing, Data modeling, Process modeling, Inspection, Extreme ultraviolet, Manufacturing, Integrated modeling, Applied sciences

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Proceedings Article | 19 May 2011 Paper

Collaborative research on emerging technologies and design

Andrew Neureuther, Juliet Rubinstein, Marshal Miller, Kenji Yamazoe, Eric Chin, Cooper Levy, Lynn Wang, Nuo Xu, Costas Spanos, Kun Qian, Kameshwar Poolla, Justin Ghan, Anand Subramanian, Tsu-Jae King Liu, Xin Sun, Kwangok Jeong, Puneet Gupta, Abde Kaqalwalla, Rani Ghaida, Tuck Boon Chan

Proceedings Volume 8081, 80810N (2011) https://doi.org/10.1117/12.899394

KEYWORDS: Photomasks, Double patterning technology, Lithography, Image processing, Line edge roughness, Algorithm development, Reticles, Inspection, Design for manufacturing, Device simulation

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Proceedings Article | 25 September 2010 Paper

Compensation methods using a new model for buried defects in extreme ultraviolet lithography masks

Chris Clifford, Tina Chan, Andrew Neureuther, Ying Li, Danping Peng, Linyong Pang

Proceedings Volume 7823, 78230V (2010) https://doi.org/10.1117/12.868281

KEYWORDS: Finite-difference time-domain method, Double positive medium, Extreme ultraviolet, Photomasks, Reflection, Computer simulations, Semiconducting wafers, Extreme ultraviolet lithography, Ray tracing, Image processing

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A new method for predicting the reflection from an extreme ultraviolet (EUV) multilayer is described which when implemented into the new Defect Printability Simulator (DPS) can calculate the image produced by an EUV mask with a buried defect several orders of magnitude faster than the finite difference time domain (FDTD). A new buried defect compensation method is also demonstrated to correct the in focus image of a line space pattern containing a buried defect. The new multilayer model accounts for the disruption of the magnitude and phase of the reflected field from an EUV multilayer defect. It does this by sampling the multilayer on a non-uniform grid and calculating the analytic complex local reflection coefficient at each point. After this step, the effect of the optical path difference due to the surface defect profile is added to the total reflected field to accurately predict the reflected magnitude and phase at all points on the multilayer surface. The accuracy of the new multilayer model and the full DPS simulator is verified by comparisons to FDTD simulations. The largest difference between the two methods was 0.8nm for predicting the CD change due to a buried defect through focus. This small difference is within the margin of error for FDTD simulations of EUV multilayers. The runtime of DPS is compared to extrapolated FDTD runtimes for many simulation domain sizes and DPS is 4-5 orders of magnitude faster for all cases. For example, DPS can calculate the reflected image from a 1μm x 1μm mask area in less than 30 seconds on a single processor. FDTD would take a month on four processors. The new compensation strategy demonstrated in this work is able to remove all CD error in the simulated image due to a buried defect in a 22nm dense line space pattern. The method is iterative and a full DPS simulation is run for every iteration. After each simulation, the absorber pattern is adjusted based on the difference of the thresholded target image and thresholded defective image. This method is very simple and does not attempt to compensate for the defect through focus, but it does demonstrate the usefulness of a fast simulator for compensation.

Proceedings Article | 3 April 2010 Paper

45nm-generation parameter-specific ring oscillator monitors

Lynn T.-N. Wang, Nuo Xu, Tsu-Jae King Liu, Andrew Neureuther

Proceedings Volume 7641, 76410N (2010) https://doi.org/10.1117/12.846719

KEYWORDS: Device simulation, Photovoltaics, Etching, Lithography, Oscillators, Semiconducting wafers, Overlay metrology, CMOS technology, Data modeling, Computer aided design

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Proceedings Article | 3 April 2010 Paper

Variability aware timing models at the standard cell level

Eric Chin, Cooper Levy, Andrew Neureuther

Proceedings Volume 7641, 76410H (2010) https://doi.org/10.1117/12.846689

KEYWORDS: Transistors, Lithography, Device simulation, Instrument modeling, Capacitance, Performance modeling, 193nm lithography, Standards development, Data modeling, Semiconducting wafers

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Proceedings Article | 23 March 2010 Paper

Compensation methods for buried defects in extreme ultraviolet lithography masks

Chris Clifford, Tina Chan, Andrew Neureuther

Proceedings Volume 7636, 763623 (2010) https://doi.org/10.1117/12.846671

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Inspection, 193nm lithography, Lithography, Particles, Wafer-level optics

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Proceedings Article | 10 March 2010 Paper

Automatic numerical determination of lateral influence functions for fast-CAD

Marshal Miller, Kenji Yamazoe, Andrew Neureuther

Proceedings Volume 7640, 764031 (2010) https://doi.org/10.1117/12.846630

KEYWORDS: Photomasks, Composites, Convolution, Polarization, Monochromatic aberrations, Lithography, Electromagnetism, Calibration, Binary data, Detection and tracking algorithms

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Proceedings Article | 4 March 2010 Paper

Aerial image calculation by eigenvalues and eigenfunctions of a matrix that includes source, pupil, and mask

Kenji Yamazoe, Andrew Neureuther

Proceedings Volume 7640, 76400N (2010) https://doi.org/10.1117/12.846666

KEYWORDS: Diffraction, Matrices, Image acquisition, Principal component analysis, Imaging systems, Coherence imaging, Fourier transforms, System on a chip, Coherence (optics), Light sources

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Proceedings Article | 30 September 2009 Paper

Extensions of boundary layer modeling of photomask topography effects to fast-CAD using pattern matching

Marshal Miller, Kenji Yamazoe, Andrew Neureuther

Proceedings Volume 7488, 74883H (2009) https://doi.org/10.1117/12.829657

KEYWORDS: Photomasks, Composites, Monochromatic aberrations, Fourier transforms, Lithography, Zernike polynomials, Airborne remote sensing, Polarization, Electromagnetism, Semiconducting wafers

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Proceedings Article | 23 September 2009 Paper

Investigation of buried EUV mask defect printability using actinic inspection and fast simulation

Chris Clifford, Tina Chan, Andrew Neureuther, Kenneth Goldberg, Iacopo Mochi, Ted Liang

Proceedings Volume 7488, 74882H (2009) https://doi.org/10.1117/12.829716

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet, Inspection, Defect detection, Extreme ultraviolet lithography, High volume manufacturing, Semiconducting wafers, Multilayers, Computer simulations

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SPIE Journal Paper | 1 July 2009

Fast simulation methods and modeling for extreme ultraviolet masks with buried defects

Christopher Clifford, Andrew Neureuther

JM3, Vol. 8, Issue 03, 031402, (July 2009) https://doi.org/10.1117/12.10.1117/1.3152372

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Photomasks, Computer simulations, Ray tracing, Extreme ultraviolet lithography, Lithography, Fourier transforms, Finite element methods, Near field

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Proceedings Article | 18 March 2009 Paper

Comparison of fast 3D simulation and actinic inspection for EUV masks with buried defects

Chris Clifford, Sandy Wiraatmadja, Tina Chan, Andrew Neureuther, Kenneth Goldberg, Iacopo Mochi, Ted Liang

Proceedings Volume 7271, 72711F (2009) https://doi.org/10.1117/12.813846

KEYWORDS: Monochromatic aberrations, Extreme ultraviolet, Inspection, Photomasks, Spherical lenses, Extreme ultraviolet lithography, Near field, Computer simulations, Lithography, Image analysis

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Proceedings Article | 16 March 2009 Paper

Analysis and modeling of photomask edge effects for 3D geometries and the effect on process window

Marshal Miller, Andrew Neureuther

Proceedings Volume 7274, 727424 (2009) https://doi.org/10.1117/12.814250

KEYWORDS: Photomasks, Polarization, Phase shifts, 3D modeling, Solid modeling, Computer aided design, Finite-difference time-domain method, Semiconducting wafers, Near field, Data modeling

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Proceedings Article | 16 March 2009 Paper

Through-focus pattern matching applied to double patterning

Juliet Rubinstein, Andrew Neureuther

Proceedings Volume 7274, 72741A (2009) https://doi.org/10.1117/12.814190

KEYWORDS: Double patterning technology, Optical proximity correction, Monochromatic aberrations, Data modeling, Convolution, Point spread functions, Logic, Optical simulations, Fourier transforms, Zernike polynomials

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Proceedings Article | 13 March 2009 Paper

Variability aware interconnect timing models for double patterning

Eric Chin, Andrew Neureuther

Proceedings Volume 7275, 727513 (2009) https://doi.org/10.1117/12.814281

KEYWORDS: Double patterning technology, Lithography, Metals, Capacitance, Critical dimension metrology, Optical lithography, Resistance, Device simulation, Signal processing, Instrument modeling

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Proceedings Article | 13 March 2009 Paper

Illustration of illumination effects on proximity, focus spillover, and design rules

Lynn Wang, Anthony Yeh, Lilly Kem, Andrew Neureuther

Proceedings Volume 7275, 72750B (2009) https://doi.org/10.1117/12.814222

KEYWORDS: Photomasks, Lithographic illumination, Fourier transforms, Binary data, Visualization, Monochromatic aberrations, Transmittance, Convolution, Spherical lenses, Superposition

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Proceedings Article | 13 March 2009 Paper

Tiny footprint programmable electrical defocus monitors

Wojtek Poppe, Patrick Au, Darshana Jayasuriya, Juliet Rubinstein, Andrew Neureuther

Proceedings Volume 7275, 727507 (2009) https://doi.org/10.1117/12.814448

KEYWORDS: Etching, Semiconducting wafers, Resistance, Design for manufacturing, Lithography, Process control, Photomasks, Structural design, Metrology, Calibration

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Proceedings Article | 13 March 2009 Paper

Parameter-specific electronic measurement and analysis of sources of variation using ring oscillators

Lynn T.-N. Wang, Liang-Teck Pang, Andrew Neureuther, Borivoje Nikolić

Proceedings Volume 7275, 72750L (2009) https://doi.org/10.1117/12.814227

KEYWORDS: Oscillators, Diffusion, Lithography, Etching, Structural design, Transistors, Visualization, Photomasks, Capacitance, Capacitors

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Proceedings Article | 17 October 2008 Paper

Smoothing based model for images of buried EUV multilayer defects near absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 7122, 71221X (2008) https://doi.org/10.1117/12.801311

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Photomasks, Ray tracing, Multilayers, Computer simulations, Near field, Extreme ultraviolet lithography, Critical dimension metrology, Fourier transforms

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Proceedings Article | 23 April 2008 Open Access

If it moves, simulate it!

Andrew Neureuther

Proceedings Volume 6924, 692402 (2008) https://doi.org/10.1117/12.782310

KEYWORDS: Photomasks, Lithography, Etching, Manufacturing, Printing, Phase shifts, Optical lithography, Optical proximity correction, Extreme ultraviolet, Modulation transfer functions

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Proceedings Article | 24 March 2008 Paper

Probe-pattern grating focus monitor through scatterometry calibration

Jing Xue, Costas Spanos, Andrew Neureuther

Proceedings Volume 6922, 692225 (2008) https://doi.org/10.1117/12.773191

KEYWORDS: Scatterometry, Calibration, Scatter measurement, Interferometers, Critical dimension metrology, Phase shifts, Spherical lenses, Fourier transforms, Sensors, Semiconducting wafers

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Proceedings Article | 20 March 2008 Paper

Smoothing based fast model for images of isolated buried EUV multilayer defects

Chris Clifford, Andrew Neureuther

Proceedings Volume 6921, 692119 (2008) https://doi.org/10.1117/12.771530

KEYWORDS: Extreme ultraviolet, Photomasks, Near field, Ray tracing, Finite-difference time-domain method, 3D modeling, Image processing, Etching, Interfaces, Extreme ultraviolet lithography

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Proceedings Article | 18 March 2008 Paper

Hypersensitive parameter-identifying ring oscillators for lithography process monitoring

Lynn Wang, Wojtek Poppe, Liang-Teck Pang, Andrew Neureuther, Elad Alon, Borivoje Nikolic

Proceedings Volume 6925, 69250P (2008) https://doi.org/10.1117/12.773184

KEYWORDS: Oscillators, Lithography, Device simulation, Design for manufacturing, Transistors, Phase shifts, Semiconducting wafers, Instrument modeling, Manufacturing, Circuit switching

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Proceedings Article | 12 March 2008 Paper

Post-decomposition assessment of double patterning layout

Juliet Rubinstein, Andrew Neureuther

Proceedings Volume 6924, 69240O (2008) https://doi.org/10.1117/12.772891

KEYWORDS: Monochromatic aberrations, Optical proximity correction, Double patterning technology, Lithography, Photomasks, Fourier transforms, Phase shifts, Data modeling, Etching, Image quality standards

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Proceedings Article | 16 November 2007 Paper

Lateral interactions between standard cells using pattern matching

Lynn Tao-Ning Wang, Andrew Neureuther

Proceedings Volume 6730, 673010 (2007) https://doi.org/10.1117/12.746758

KEYWORDS: Metals, Standards development, Fourier transforms, Lithography, Calibration, Microelectronics, Transistors, Photomasks, Visualization, Optical proximity correction

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Proceedings Article | 1 November 2007 Paper

Parameter sensitive patterns for scatterometry monitoring

Jing Xue, Yu Ben, Chaohao Wang, Marshal Miller, Costas Spanos, Andrew Neureuther

Proceedings Volume 6730, 67304S (2007) https://doi.org/10.1117/12.746833

KEYWORDS: Scatterometry, Calibration, Critical dimension metrology, Data modeling, Scatter measurement, Semiconducting wafers, Metrology, Phase shifts, Finite element methods, Panoramic photography

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Proceedings Article | 1 November 2007 Paper

Database and data analysis strategy for multi-designer testchips

Wojtek Poppe, Patrick Au, Darshana Jayasuriya, Andrew Neureuther

Proceedings Volume 6730, 67303T (2007) https://doi.org/10.1117/12.746739

KEYWORDS: Databases, Transistors, Data analysis, Data modeling, Process modeling, Data storage, Critical dimension metrology, Internet, Semiconducting wafers, Data mining

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Proceedings Article | 30 October 2007 Paper

Fast three-dimensional simulation of buried EUV mask defect interaction with absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 6730, 67301S (2007) https://doi.org/10.1117/12.746486

KEYWORDS: Photomasks, Finite-difference time-domain method, Extreme ultraviolet, Wave propagation, Radio propagation, Near field, Computer simulations, Ray tracing, 3D modeling, Interfaces

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Proceedings Article | 30 October 2007 Paper

Images in photoresist for self-interferometric electrical image monitors

Juliet Rubinstein, Andrew Neureuther

Proceedings Volume 6730, 673039 (2007) https://doi.org/10.1117/12.746728

KEYWORDS: Photomasks, Photoresist materials, Scanning electron microscopy, Semiconducting wafers, Metals, Double patterning technology, Phase shifts, Printing, Neck, Image processing

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Proceedings Article | 30 October 2007 Paper

Characterization and monitoring of photomask edge effects

Marshal Miller, Andrew Neureuther, Daniel Ceperley, Juliet Rubinstein

Proceedings Volume 6730, 67301U (2007) https://doi.org/10.1117/12.746805

KEYWORDS: Photomasks, Glasses, Phase shifting, Polarization, Finite-difference time-domain method, Phase shifts, Electromagnetic simulation, Etching, Dielectrics, Diffraction

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Proceedings Article | 28 March 2007 Paper

Transistor-based electrical test structures for lithography and process characterization

Wojtek Poppe, Juliet Holwill, Liang-Teck Pang, Paul Friedberg, Qingguo Liu, Louis Alarcon, Andrew Neureuther

Proceedings Volume 6520, 65203N (2007) https://doi.org/10.1117/12.711613

KEYWORDS: Transistors, Line width roughness, Lithography, Critical dimension metrology, Databases, Semiconducting wafers, Structural design, Cryogenics, Photomasks, Metals

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Proceedings Article | 28 March 2007 Open Access

Collaborative platform, tool-kit, and physical models for DfM

Andy Neureuther, Wojtek Poppe, Juliet Holwill, Eric Chin, Lynn Wang, Jae-Seok Yang, Marshal Miller, Dan Ceperley, Chris Clifford, Koji Kikuchi, Jihong Choi, Dave Dornfeld, Paul Friedberg, Costas Spanos, John Hoang, Jane Chang, Jerry Hsu, David Graves, Alan Wu, Mike Lieberman

Proceedings Volume 6521, 652104 (2007) https://doi.org/10.1117/12.721199

KEYWORDS: Design for manufacturing, Photomasks, Device simulation, Computer aided design, Process modeling, Etching, Monochromatic aberrations, Manufacturing, Lithography, Chemical mechanical planarization

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Proceedings Article | 21 March 2007 Paper

DRC and mask friendly pattern and probe aberration monitors

Juliet Holwill, Andrew Neureuther

Proceedings Volume 6521, 65211U (2007) https://doi.org/10.1117/12.712383

KEYWORDS: Photomasks, Manufacturing, Calibration, Scanning electron microscopy, Photoresist materials, Mask making, Lithography, Zernike polynomials, Spherical lenses, Design for manufacturability

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Proceedings Article | 21 March 2007 Paper

Prediction of interconnect delay variations using pattern matching

Eric Chin, Juliet Holwill, Andrew Neureuther

Proceedings Volume 6521, 65210I (2007) https://doi.org/10.1117/12.712257

KEYWORDS: Capacitance, Resistance, Lithography, Monochromatic aberrations, Metals, Process modeling, Etching, Chemical mechanical planarization, Critical dimension metrology, Inspection

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Proceedings Article | 13 March 2007 Paper

Fast simulation of buried EUV mask defect interaction with absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 6517, 65170A (2007) https://doi.org/10.1117/12.711173

KEYWORDS: Finite-difference time-domain method, Photomasks, Near field, Computer simulations, Extreme ultraviolet, Ray tracing, Wave propagation, Fourier transforms, Interfaces, Refractive index

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Proceedings Article | 20 October 2006 Paper

The effects of the photomask on multiphase shift test monitors

Gregory McIntyre, Andrew Neureuther

Proceedings Volume 6349, 634912 (2006) https://doi.org/10.1117/12.693199

KEYWORDS: Polarization, Photomasks, Reticles, Polarimetry, Etching, Mask making, Electromagnetism, Lithography, Calibration, Manufacturing

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Proceedings Article | 20 October 2006 Paper

Simplified model for absorber feature transmissions on EUV masks

Michael Lam, Andrew Neureuther

Proceedings Volume 6349, 63492H (2006) https://doi.org/10.1117/12.686209

KEYWORDS: Photomasks, Finite-difference time-domain method, Scattering, Extreme ultraviolet, Near field, Wave propagation, Polarization, Interfaces, Semiconducting wafers, Diffraction

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Proceedings Article | 7 July 2006 Paper

Fabrication and characteristics of free-standing shaped pupil masks for TPF-coronagraph

Kunjithapatham Balasubramanian, Pierre Echternach, Matthew Dickie, Richard Muller, Victor White, Daniel Hoppe, Stuart Shaklan, Ruslan Belikov, N. Jeremy Kasdin, Robert Vanderbei, Daniel Ceperley, Andrew Neureuther

Proceedings Volume 6265, 62653N (2006) https://doi.org/10.1117/12.673251

KEYWORDS: Photomasks, Silicon, Etching, Coronagraphy, Deep reactive ion etching, Manufacturing, Stars, Semiconducting wafers, Planets, Diffraction

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SPIE Journal Paper | 1 July 2006

Polarization aberrations in hyper-numerical-aperture projection printing: a comparison of various representations

Gregory McIntyre, Jong-Wook Kye, Harry Levinson, Andrew Neureuther

JM3, Vol. 5, Issue 03, 033001, (July 2006) https://doi.org/10.1117/12.10.1117/1.2358129

KEYWORDS: Polarization, Dielectric polarization, Monte Carlo methods, Optical lithography, Lithography, Zernike polynomials, Jones matrices, Semiconducting wafers, Optical spheres, Dielectrics

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Proceedings Article | 23 June 2006 Paper

Stray-light sources from pupil mask edges and mitigation techniques for the TPF Coronagraph

Daniel Ceperley, Andrew Neureuther, Marshall Miller, Michael Lieber, Jeremy Kasdin

Proceedings Volume 6271, 62711F (2006) https://doi.org/10.1117/12.684699

KEYWORDS: 3D modeling, Photomasks, Silicon, Diffraction, Manufacturing, Systems modeling, Polarization, Near field, Coronagraphy, Finite-difference time-domain method

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Stray-light sources from pupil plane masks that may limit Terrestrial Planet Finder Coronagraph (TPF-C) performance are characterized^1,2 and mitigation strategies are discussed to provide a guide for future development. Rigorous vector simulation with the Finite-Difference Time-Domain (FDTD) method is used to characterize waveguiding effects in narrow openings, sidewall interactions, manufacturing tool-marks, manufacturing roughness, mask tilt, and cross-wavelength performance of thick Silicon mask structures. These effects cause stray-light that is not accounted for in scalar thin-mask diffraction theory, the most important of which are sidewall interactions, waveguiding effects in narrow openings, and tilt. These results have been used to improve the scalar thin-mask theory used to simulate the TPF-C with the Integrated Telescope Model.³ Of particular interest are simulations of 100m thick vertical sidewall openings that model features typically found on Ripple masks⁴ fabricated by Reactive Ion Etching (RIE) processes.⁵ This paper contributes fundamental data for systematically modeling these effects in end-to-end system simulation. Leakage straight through the mask material varies greatly with wavelength, especially in Silicon (an attractive mask material due to the precision manufacturing techniques developed by the IC industry). Coating Silicon with 200nm of Chrome effectively mitigates the leakage without causing additional scattering. Thick-mask diffraction differs from the predictions of scalar thin-mask theory because diffraction spreading is confined by the mask's sidewalls. This confinement can make a mask opening look electro-magnetically larger or smaller than designed, by up to 3λ per vertical sidewall on a 50μm thick mask yet this can be reduced an order of magnitude by undercutting the sidewalls 20°. These confinement effects are sensitive to mask tilt (if light reaches the sidewalls) which can lead to an imbalance in stray-light sources and an extra wavelength of effective opening change on the illuminated sidewall.

Proceedings Article | 29 March 2006 Paper

Pattern noise in e-beam exposed sub-35-nm contacts

Wojtek Poppe, Alexander Liddle, Erik Anderson, Andrew Neureuther

Proceedings Volume 6153, 61533Z (2006) https://doi.org/10.1117/12.657055

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Electrons, Detection and tracking algorithms, Printing, Edge detection, Image processing, Chemically amplified resists, Electron beam lithography, Algorithm development

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Proceedings Article | 24 March 2006 Paper

Self-interferometric electrical image monitors

Juliet Holwill, Andrew Neureuther

Proceedings Volume 6152, 615215 (2006) https://doi.org/10.1117/12.656745

KEYWORDS: Photoresist materials, Double patterning technology, Printing, Image enhancement, Device simulation, Scanning electron microscopy, Semiconducting wafers, Metrology, Manufacturing, Interferometry

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Proceedings Article | 23 March 2006 Paper

High-sensitivity interferometric schemes for ML2 micromirror calibrations

Jen-Shiang Wang, Olav Solgaard, Andrew Neureuther

Proceedings Volume 6151, 615112 (2006) https://doi.org/10.1117/12.656553

KEYWORDS: Calibration, Mirrors, Micromirrors, Interferometry, Signal to noise ratio, Maskless lithography, Point spread functions, Spatial light modulators, Photomasks, Lithography

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Proceedings Article | 22 March 2006 Paper

Modeling methodologies and defect printability maps for buried defects in EUV mask blanks

Michael Lam, Andrew Neureuther

Proceedings Volume 6151, 61510D (2006) https://doi.org/10.1117/12.656744

KEYWORDS: Finite-difference time-domain method, Ray tracing, Deposition processes, Extreme ultraviolet, Reflectivity, Computer simulations, 3D imaging standards, Photomasks, Wave propagation, Scattering

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Proceedings Article | 20 March 2006 Paper

Layout 'hot spots' for advancing optical technologies

Juliet Holwill, Gregory McIntyre, Wojtek Poppe, Andrew Neureuther

Proceedings Volume 6154, 61543M (2006) https://doi.org/10.1117/12.656819

KEYWORDS: Optical proximity correction, Polarization, Monochromatic aberrations, Photomasks, Printing, Phase shifts, Double patterning technology, Lithographic illumination, Optical lithography, Fourier transforms

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Proceedings Article | 15 March 2006 Paper

Experimental verification of PSM polarimetry: monitoring polarization at 193-nm high-NA with phase-shift masks

Gregory McIntyre, Andrew Neureuther, Steve Slonaker, Venu Vellanki, Patrick Reynolds

Proceedings Volume 6154, 61540D (2006) https://doi.org/10.1117/12.656589

KEYWORDS: Polarization, Reticles, Calibration, Polarimetry, Signal detection, Photomasks, Photoresist materials, Fiber optic illuminators, Lithographic illumination, Mask making

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Proceedings Article | 13 March 2006 Paper

From poly line to transistor: building BSIM models for non-rectangular transistors

Wojtek Poppe, Luigi Capodieci, Joanne Wu, Andrew Neureuther

Proceedings Volume 6156, 61560P (2006) https://doi.org/10.1117/12.657051

KEYWORDS: Transistors, Critical dimension metrology, Device simulation, Optical proximity correction, Manufacturing, Capacitance, Design for manufacturability, Ions, Oscillators, Design for manufacturing

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Proceedings Article | 13 March 2006 Paper

Platform for collaborative DFM

Wojtek Poppe, Luigi Capodieci, Andrew Neureuther

Proceedings Volume 6156, 61560E (2006) https://doi.org/10.1117/12.657042

KEYWORDS: Transistors, Critical dimension metrology, Device simulation, Design for manufacturing, Semiconductors, Optical proximity correction, Photomasks, Metrology, Image processing, Physics

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Proceedings Article | 14 September 2005 Paper

Evaluating the end-to-end performance of TPF-C with vector propagation models: Part I. Pupil mask effects

Mike Lieber, Andrew Neureuther, Dan Ceperley, Jeremy Kasdin, Dan Hoppe, Allan Eisenman

Proceedings Volume 5905, 59050K (2005) https://doi.org/10.1117/12.615589

KEYWORDS: Planets, Performance modeling, Wave propagation, Wavefronts, Light wave propagation, Information technology, Coronagraphy, Stars, Control systems, Finite-difference time-domain method

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Proceedings Article | 14 September 2005 Paper

Characterizing edge-generated stray light sources for TPF Coronagraph pupil masks

Daniel Ceperley, Andrew Neureuther, Michael Lieber, Jeremy Kasdin

Proceedings Volume 5905, 59050J (2005) https://doi.org/10.1117/12.617221

KEYWORDS: Surface plasmons, Polarization, Telescopes, Integrated modeling, Coronagraphy, Surface plasmon polaritons, Finite-difference time-domain method, Refractive index, Planets, Stray light

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Proceedings Article | 18 August 2005 Paper

Phase shifting mask as a precision instrument for characterizing image-forming optical systems

Gregory McIntyre, Garth Robbins, Andrew Neureuther

Proceedings Volume 5878, 587808 (2005) https://doi.org/10.1117/12.612751

KEYWORDS: Photomasks, Polarization, Point spread functions, Phase shifts, Imaging systems, Polarimetry, Fiber optic illuminators, Optical lithography, Phase shifting, Lithographic illumination

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SPIE Journal Paper | 1 July 2005

Phase-shifting mask polarimetry: monitoring polarization at 193-nm high numerical aperture and immersion lithography with phase shifting masks

Gregory McIntyre, Andrew Neureuther

JM3, Vol. 4, Issue 03, 031102, (July 2005) https://doi.org/10.1117/12.10.1117/1.2038487

KEYWORDS: Polarization, Polarimetry, Photomasks, Calibration, Reticles, Phase shifts, Point spread functions, Printing, Immersion lithography, Lithographic illumination

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Proceedings Article | 12 May 2005 Paper

Are pattern and probe aberration monitors ready for prime time?

Garth Robins, Andrew Neureuther

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600611

KEYWORDS: Photomasks, Phase shifts, Scanning electron microscopy, Semiconducting wafers, Electromagnetism, Etching, Reticles, Polarization, Charge-coupled devices, Mask making

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Proceedings Article | 12 May 2005 Paper

PSM polarimetry: monitoring polarization at 193nm high-NA and immersion with phase shifting masks

Gregory McIntyre, Andrew Neureuther

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599058

KEYWORDS: Polarization, Polarimetry, Photomasks, Calibration, Reticles, Point spread functions, Phase shifting, Mask making, Semiconducting wafers, Printing

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Proceedings Article | 6 May 2005 Paper

Two-wave pattern shift aberration monitor for centrally obscured optical systems

Jason Cain, Gregory McIntyre, Patrick Naulleau, Adam Pawloski, Bruno La Fontaine, Obert Wood, Costas Spanos, Andrew Neureuther

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600399

KEYWORDS: Semiconducting wafers, Photomasks, Wavefronts, Wafer-level optics, Interferometry, EUV optics, Extreme ultraviolet lithography, Spatial frequencies, Extreme ultraviolet, Lithographic illumination

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Proceedings Article | 6 May 2005 Paper

A 3D substrate and buried defect simulator for EUV mask blanks

Michael Lam, Andrew Neureuther

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599042

KEYWORDS: Ray tracing, Finite-difference time-domain method, Extreme ultraviolet, Tolerancing, 3D image processing, Photomasks, Multilayers, Extreme ultraviolet lithography, Reflection, Fourier transforms

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Proceedings Article | 4 May 2005 Paper

Applying double exposed sharp tip technique (DEST) to characterize material phenomena in DUV photoresist

Lei Yuan, Seiji Nagahara, Andrew Neureuther

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598944

KEYWORDS: Diffusion, Silicon, Critical dimension metrology, Coating, Double patterning technology, Printing, Scanning electron microscopy, Deep ultraviolet, Lithography, Process control

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Proceedings Article | 4 May 2005 Paper

Understanding quencher mechanisms by considering photoacid-dissociation equilibrium in chemically amplified resists

Seiji Nagahara, Lei Yuan, Wojtek Jacob Poppe, Andrew Neureuther, Yoshiyuki Kono, Atsushi Sekiguchi, Koichi Fujiwara, Tsuyoshi (Gary) Watanabe, Kazuo Taira, Shiro Kusumoto, Takanori Nakano, Tsutomu Shimokawa

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598949

KEYWORDS: Systems modeling, FT-IR spectroscopy, Diffusion, 3D modeling, Solids, Semiconducting wafers, Chemically amplified resists, Data modeling, Spectroscopy, Liquids

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Proceedings Article | 6 December 2004 Paper

Fast simulation methods for defective EUV mask blank inspection

Michael Lam, Andrew Neureuther

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569075

KEYWORDS: Finite-difference time-domain method, Ray tracing, Reflection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Multilayers, Wave propagation, Geometrical optics, Near field

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Proceedings Article | 6 December 2004 Paper

Characterizing the demons in high-NA phase-shifting masks

Garth Robins, Andrew Neureuther

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568758

KEYWORDS: Photomasks, Scanning electron microscopy, Phase shifts, Photoresist materials, Electromagnetism, Polarization, Semiconducting wafers, Lithography, Imaging systems, Monochromatic aberrations

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Proceedings Article | 15 October 2004 Paper

Vector scattering analysis of TPF coronagraph pupil masks

Daniel Ceperley, Andrew Neureuther, Michael Lieber, N. Jeremy Kasdin, Ta-Ming Shih

Proceedings Volume 5526, (2004) https://doi.org/10.1117/12.562265

KEYWORDS: Photomasks, Polarization, Finite-difference time-domain method, Coronagraphy, Air contamination, Metals, Planets, Scattering, Chromium, Systems modeling

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Proceedings Article | 12 October 2004 Paper

Vector wavefront propagation modeling for the TPF coronagraph

Michael Lieber, Andrew Neureuther, Dan Ceperley, N. Jeremy Kasdin, Nikolay Ter-Gabrielyan

Proceedings Volume 5487, (2004) https://doi.org/10.1117/12.550742

KEYWORDS: Wavefronts, Wave propagation, Finite-difference time-domain method, Coronagraphy, Planets, Light wave propagation, Polarization, Performance modeling, Diffraction, Photomasks

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Proceedings Article | 28 May 2004 Paper

Initial experimental verification: characterizing tool illumination and PSM performance with phase shifting masks

Gregory McIntyre, Andrew Neureuther

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535612

KEYWORDS: Photomasks, Phase shifting, Fiber optic illuminators, Phase measurement, Reticles, Interferometry, Photoresist materials, Printing, Mask making, Etching

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Proceedings Article | 28 May 2004 Paper

Fast algorithm for extraction of worst-case image degradation due to flare

Scott Hafeman, Frank Gennari, Andrew Neureuther

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535832

KEYWORDS: Point spread functions, Optical transfer functions, Fourier transforms, Photomasks, Light scattering, Optical proximity correction, Convolution, Feature extraction, Scattering, Manufacturing

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Proceedings Article | 28 May 2004 Paper

Interferometric-probe aberration monitor performance in the production environment

Garth Robins, Andrew Neureuther, Mircea Dusa, Jongwook Kye

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536596

KEYWORDS: Monochromatic aberrations, Printing, Scanning electron microscopy, Interferometry, Spherical lenses, Target detection, Photomasks, Phase shifts, Scanners, Semiconducting wafers

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Proceedings Article | 20 May 2004 Paper

Simulation of fine structures and defects in EUV etched multilayer masks

Yunfei Deng, Bruno La Fontaine, Adam Pawloski, Andrew Neureuther

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537229

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Critical dimension metrology, Binary data, Multilayers, Optical lithography, Silicon, Refractive index, Near field

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Proceedings Article | 14 May 2004 Paper

Investigation of shot-noise-induced line-edge roughness by continuous-model-based simulation

Lei Yuan, Andrew Neureuther

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535516

KEYWORDS: Line edge roughness, Diffusion, Statistical modeling, Computer simulations, Statistical analysis, Extreme ultraviolet, Process modeling, Surface roughness, Analytical research, Failure analysis

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Proceedings Article | 14 May 2004 Paper

Fast resist modeling and its application in 193nm lithography

Lei Yuan, Andrew Neureuther, Ebo Croffie

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535564

KEYWORDS: Model-based design, Diffusion, Cadmium, Optical proximity correction, Logic, 193nm lithography, Scanning electron microscopy, Critical dimension metrology, Partial differential equations, Photoresist processing

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Proceedings Article | 14 May 2004 Paper

Improved performance of Apex-E photoresist with the application of the electric field enhanced PEB

Jacob Poppe, Andrew Neureuther

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536540

KEYWORDS: Control systems, Electrodes, Semiconducting wafers, Photoresist materials, Diffusion, Photoresist processing, Chemically amplified resists, Scanning electron microscopy, Microfabrication, Real-time computing

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Proceedings Article | 14 May 2004 Paper

Effect of background exposure dose upon line-edge roughness (LER)

Mike Williamson, Andrew Neureuther

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535623

KEYWORDS: Line edge roughness, Data modeling, Photoresist materials, Lithography, Scanning electron microscopy, Statistical analysis, Critical dimension metrology, Photomasks, Semiconducting wafers, Diffusion

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Proceedings Article | 3 May 2004 Paper

Feature level test patterns for characterizing residual process effects

Andrew Neureuther, Gregory McIntyre, Frank Gennari, Michael Lam, Jason Cain, Garth Robins, Edward Huang, Jihong Choi, Ling Wang, Lei Yuan, Hideaki Oshima

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.540685

KEYWORDS: Plasma etching, Chemical mechanical planarization, Photomasks, Computer aided design, Optical proximity correction, Electronics, Etching, Metrology, Design for manufacturability, Prototyping

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Proceedings Article | 17 December 2003 Paper

Interferometric-probe monitors for self-diagnostics of phase-shifting mask performance

Gregory McIntyre, Andrew Neureuther

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518273

KEYWORDS: Photomasks, Interferometry, Transmittance, Phase shifts, Error analysis, Phase measurement, Manufacturing, Image analysis, Point spread functions, Mask making

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Proceedings Article | 17 December 2003 Paper

Interferometric-probe aberration monitors: aerial image and in-resist performance

Garth Robins, Mircea Dusa, Bernd Geh, Andrew Neureuther

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518603

KEYWORDS: Monochromatic aberrations, Printing, Photomasks, Point spread functions, Semiconducting wafers, Interferometry, Target detection, Electromagnetism, Phase shifts, Scanners

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Proceedings Article | 26 June 2003 Paper

Domain decomposition methods for simulation of printing and inspection of phase defects

Michael Lam, Konstantinos Adam, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485485

KEYWORDS: Inspection, Polarization, Projection systems, Photomasks, Etching, Diffraction, Printing, Computer simulations, Spatial frequencies, Cadmium sulfide

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Proceedings Article | 26 June 2003 Paper

Web tool for worst-case assessment of aberration effects in printing a layout

Frank Gennari, Sachan Madahar, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485448

KEYWORDS: Interfaces, Zernike polynomials, Monochromatic aberrations, Raster graphics, Printing, Optical proximity correction, Human-machine interfaces, Java, Binary data, Software development

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Proceedings Article | 26 June 2003 Paper

Characterizing illumination angular uniformity with phase-shifting masks

Gregory McIntyre, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485438

KEYWORDS: Photomasks, Fiber optic illuminators, Semiconducting wafers, Phase shifts, Inspection, Lithographic illumination, Phase shifting, Printing, Optical microscopes, Electromagnetism

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Proceedings Article | 26 June 2003 Paper

Simulation of imaging and stray light effects in immersion lithography

Scott Hafeman, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485460

KEYWORDS: Liquids, Immersion lithography, Imaging systems, Image quality, Polarization, 3D modeling, Scattering, Photomasks, Image filtering, Scanning tunneling microscopy

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Proceedings Article | 26 June 2003 Paper

Experimental assessment of pattern and probe-based aberration monitors

Garth Robins, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485491

KEYWORDS: Monochromatic aberrations, Photomasks, Spherical lenses, Point spread functions, Phase shifts, Calibration, Scanning electron microscopy, Printing, Charge-coupled devices, Interferometry

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Proceedings Article | 16 June 2003 Paper

Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging

Yunfei Deng, Bruno La Fontaine, Harry Levinson, Andrew Neureuther

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484986

KEYWORDS: Photomasks, Extreme ultraviolet, Binary data, Multilayers, Extreme ultraviolet lithography, Optical lithography, Near field, Etching, Phase shifts, Chromium

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Proceedings Article | 12 June 2003 Paper

Improving chemically amplified resist modeling for 2D layout patterns

Lei Yuan, Andrew Neureuther

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485152

KEYWORDS: Diffusion, Double patterning technology, Scanning electron microscopy, Semiconducting wafers, Image enhancement, Chemically amplified resists, Photoresist materials, Coating, Lithography, Absorption

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Proceedings Article | 12 June 2003 Paper

Enhanced quantitative analysis of resist image contrast upon line-edge roughness (LER)

Mike Williamson, Andrew Neureuther

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485150

KEYWORDS: Line edge roughness, Scanning electron microscopy, Point spread functions, Image enhancement, Image restoration, Photoresist materials, Image processing, Lithography, Image quality, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

No-fault assurance: linking fast-process CAD and EDA

Andrew Neureuther, Frank Gennari

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467898

KEYWORDS: Photomasks, Computer aided design, Reflectivity, Chemical mechanical planarization, Laser processing, Oxides, Manufacturing, Electronic design automation, Prototyping, Process modeling

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Proceedings Article | 27 December 2002 Paper

Polarization contact: mask engineering

Michael Lam, Andrew Neureuther

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467897

KEYWORDS: Polarization, Photomasks, Tolerancing, Refractive index, Interfaces, Molybdenum, Printing, Thin films, Mask making, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

Performance of repaired defects and attPSM in EUV multilayer masks

Yunfei Deng, Bruno La Fontaine, Andrew Neureuther

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467896

KEYWORDS: Multilayers, Phase shifts, Extreme ultraviolet, Photomasks, Near field, Reflectivity, 3D modeling, Particles, Image quality, Electromagnetic simulation

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SPIE Journal Paper | 1 October 2002

Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering

Konstantinos Adam, Andrew Neureuther

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1506178

KEYWORDS: Photomasks, Diffraction, 3D modeling, Scattering, Electromagnetic simulation, Near field, Polarization, Computer simulations, Optical proximity correction, Electromagnetism

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Proceedings Article | 30 July 2002 Paper

Polarization masks: concept and initial assessment

Michael Lam, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474593

KEYWORDS: Polarization, Photomasks, Dielectric polarization, Refractive index, Near field, Phase shifts, Optical lithography, Lithography, Electromagnetism, Bridges

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Proceedings Article | 30 July 2002 Paper

Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474483

KEYWORDS: Photomasks, Diffraction, 3D modeling, Computer simulations, Near field, Polarization, Promethium, Optical proximity correction, Spatial frequencies, Scattering

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Proceedings Article | 30 July 2002 Paper

Illumination, mask, and tool effects on pattern and probe-based aberration monitors

Garth Robins, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474500

KEYWORDS: Monochromatic aberrations, Phase shifts, Photomasks, Spherical lenses, Mask making, Lithographic illumination, Optics manufacturing, Optical lithography, Optical alignment, Tolerancing

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Proceedings Article | 30 July 2002 Paper

Effects of residual aberrations on line-end shortening in 193-nm lithography

Mosong Cheng, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474526

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Cadmium, Scanning electron microscopy, Optical proximity correction, 193nm lithography, Lithography, Calibration, Printing

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Proceedings Article | 30 July 2002 Paper

OPC rectification of random space patterns in 193-nm lithography

Mosong Cheng, Andrew Neureuther, Keeho Kim, Z. Mark Ma, Won Kim, Maureen Hanratty

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474512

KEYWORDS: Optical proximity correction, Critical dimension metrology, Cadmium sulfide, Scanning electron microscopy, Process modeling, Photomasks, Printing, Lithography, Calibration, 193nm lithography

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Proceedings Article | 24 July 2002 Paper

Effects of image contrast and resist types upon line edge roughness (LER)

Mike Williamson, Xiaofan Meng, Andrew Neureuther

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474235

KEYWORDS: Line edge roughness, Scanning electron microscopy, Atomic force microscopy, Semiconducting wafers, Lithography, Photomasks, Metrology, Image enhancement, Chemically amplified resists, Semiconductor manufacturing

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Proceedings Article | 24 July 2002 Paper

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique

Lei Yuan, Andrew Neureuther

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474173

KEYWORDS: Diffusion, Double patterning technology, Diffraction, Lithography, Printing, Krypton, Scanning electron microscopy, Calibration, Feature extraction, Photoresist processing

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Proceedings Article | 12 July 2002 Paper

Validation of the aberration-pattern-matching OPC strategy

Frank Gennari, Garth Robins, Andrew Neureuther

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475679

KEYWORDS: Monochromatic aberrations, Binary data, Optical proximity correction, Spherical lenses, Phase shifts, Computer aided design, Electronic design automation, Fourier transforms, Photomasks, Image processing

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Proceedings Article | 1 July 2002 Paper

Simulation of exposure and alignment for nano-imprint lithography

Yunfei Deng, Andrew Neureuther

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472356

KEYWORDS: Metals, Polarization, Lithography, Refractive index, Binary data, Optical alignment, Chromium, Semiconducting wafers, Inspection, Silver

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Proceedings Article | 1 July 2002 Paper

EUV phase-shifting masks and aberration monitors

Yunfei Deng, Andrew Neureuther

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472325

KEYWORDS: Photomasks, Phase shifts, Extreme ultraviolet, Monochromatic aberrations, Near field, Chromium, Extreme ultraviolet lithography, Lithography, Diffraction, Deep ultraviolet

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Proceedings Article | 11 March 2002 Paper

Aberrations are a big part of OPC for phase shifting masks

Frank Gennari, Andrew Neureuther

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458272

KEYWORDS: Monochromatic aberrations, Binary data, Photomasks, Prototyping, Computer aided design, Optical proximity correction, CAD systems, Printing, C++, Fourier transforms

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Proceedings Article | 11 March 2002 Paper

Methodology for accurate and rapid simulation of large arbitrary 2D layouts of advanced photomasks

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458269

KEYWORDS: Diffraction, Polarization, Photomasks, Scattering, Near field, Chromium, Data transmission, 3D modeling, Electromagnetism, Image acquisition

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Proceedings Article | 14 September 2001 Paper

ArF imaging modeling by using resist simulation and pattern matching

Mosong Cheng, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435731

KEYWORDS: Scanning electron microscopy, Performance modeling, Lithography, Calibration, Photomasks, Distortion, Device simulation, Image processing, Computer simulations, Scanners

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Proceedings Article | 14 September 2001 Paper

LAVA web-based remote simulation: enhancements for education and technology innovation

Sang Il Lee, Ka Chun Ng, Takashi Orimoto, Jason Pittenger, Toshi Horie, Konstantinos Adam, Mosong Cheng, Ebo Croffie, Yunfei Deng, Frank Gennari, Thomas Pistor, Garth Robins, Mike Williamson, Bo Wu, Lei Yuan, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435691

KEYWORDS: Printing, Java, Photomasks, Diffusion, Near field, Computer simulations, Optical simulations, Lithography, Human-machine interfaces, Etching

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Proceedings Article | 14 September 2001 Paper

Rigorous electromagnetic simulation applied to alignment systems

Yunfei Deng, Thomas Pistor, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435695

KEYWORDS: Optical alignment, Silicon, Nanoimprint lithography, Refractive index, Electromagnetic simulation, Diffraction, Semiconducting wafers, Wave propagation, Polarization, Analytical research

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Proceedings Article | 14 September 2001 Paper

Simplified models for edge transitions in rigorous mask modeling

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435733

KEYWORDS: Photomasks, Diffraction, 3D modeling, Data transmission, Near field, Glasses, 3D image processing, Lithography, Phase shifts, Optical proximity correction

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Proceedings Article | 5 September 2001 Paper

Simulation of image quality issues at low k1 for 100-nm lithography

Andrew Neureuther, Konstantinos Adam, Shoji Hotta, Thomas Pistor, Garth Robins, Yunfei Deng

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438395

KEYWORDS: Photomasks, Monochromatic aberrations, Phase shifts, Lithography, Printing, Quartz, Image quality, Extreme ultraviolet, Spherical lenses, Near field

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Proceedings Article | 24 August 2001 Paper

Three-dimensional post-exposure modeling and its applications

Lei Yuan, Mosong Cheng, Ebo Croffie, Andrew Neureuther

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436824

KEYWORDS: Diffusion, Finite element methods, 3D modeling, Computer simulations, Contamination, Photomasks, Chemically amplified resists, Deep ultraviolet, Semiconducting wafers, Photoresist processing

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Proceedings Article | 24 August 2001 Paper

Survey of chemically amplified resist models and simulator algorithms

Ebo Croffie, Lei Yuan, Mosong Cheng, Andrew Neureuther

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436823

KEYWORDS: Diffusion, Fused deposition modeling, Polymers, Finite element methods, Computer simulations, Chemically amplified resists, Systems modeling, Photoresist processing, Image acquisition, Image processing

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Proceedings Article | 20 August 2001 Paper

Impact of positive ions and effect of lens aberrations in projection electron-beam systems

Bo Wu, Andrew Neureuther

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436641

KEYWORDS: Stochastic processes, Ions, Optical simulations, Electron beams, Monochromatic aberrations, Ionization, Particles, Semiconducting wafers, Computer simulations, Diagnostics

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Proceedings Article | 20 August 2001 Paper

Models for characterizing the printability of buried EUV defects

Yunfei Deng, Thomas Pistor, Andrew Neureuther

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436687

KEYWORDS: 3D modeling, Scattering, Extreme ultraviolet, Light scattering, Semiconducting wafers, Data modeling, Point spread functions, Photomasks, Radio propagation, Near field

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Proceedings Article | 22 January 2001 Paper

Effects of shifter edge topography on through focus performance

Shoji Hotta, Thomas Pistor, Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410765

KEYWORDS: Photomask technology

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Proceedings Article | 22 January 2001 Paper

Modeling defect-feature interactions in the presence of aberrations

Andrew Neureuther, Shoji Hotta, Konstantinos Adam

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410717

KEYWORDS: Monochromatic aberrations, Spherical lenses, Photomasks, Halftones, Wafer inspection, Phase shifts, Interferometry, Calibration, Inspection, Inspection equipment

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Proceedings Article | 21 July 2000 Paper

Coulomb interactions and the effect of compensating lens aberration in projection electron-beam systems

Bo Wu, Andrew Neureuther

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390110

KEYWORDS: Stochastic processes, Photomasks, Semiconducting wafers, Monochromatic aberrations, Projection systems, Optical simulations, Electron beams, Electron beam lithography, Computing systems, Physics

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Proceedings Article | 21 July 2000 Paper

Simulation of EUV multilayer mirror buried defects

Matthew Brukman, Yunfei Deng, Andrew Neureuther

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390121

KEYWORDS: Mirrors, Ions, Etching, Semiconducting wafers, Extreme ultraviolet, Reflectivity, Sputter deposition, Extreme ultraviolet lithography, Photomasks, Electromagnetism

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Proceedings Article | 5 July 2000 Paper

Analysis of OPC features in binary masks at 193 nm

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389064

KEYWORDS: Optical proximity correction, Electromagnetic simulation, Photomasks, Binary data, Polarization, Ear, Cerium, Near field, Chromium, Electromagnetism

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Proceedings Article | 5 July 2000 Paper

Modeling oblique incidence effects in photomasks

Thomas Pistor, Andrew Neureuther, Robert Socha

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389012

KEYWORDS: Photomasks, Scattering, Electromagnetic scattering, Polarization, Binary data, Inspection, Phase shifts, Optical proximity correction, 3D modeling, Electromagnetic simulation

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Proceedings Article | 23 June 2000 Paper

Modeling chemically amplified resists for 193-nm lithography

Ebo Croffie, Mosong Cheng, Andrew Neureuther, Francis Houlihan, Raymond Cirelli, James Sweeney, Gary Dabbagh, Pat Watson, Omkaram Nalamasu, Ilya Rushkin, Ognian Dimov, Allen Gabor

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388300

KEYWORDS: Diffusion, Data modeling, FT-IR spectroscopy, Chemically amplified resists, Semiconducting wafers, Absorbance, Photolysis, Polymers, Lithography, Interfaces

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Proceedings Article | 23 June 2000 Paper

Fast imaging algorithm for simulating pattern transfer in deep-UV resist and extracting postexposure bake parameters

Mosong Cheng, Ebo Croffie, Andrew Neureuther

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388372

KEYWORDS: Computer simulations, Fused deposition modeling, Diffusion, Deep ultraviolet, Calcium, Partial differential equations, Optical proximity correction, Finite difference methods, Chemically amplified resists, Computing systems

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Proceedings Article | 23 June 2000 Paper

Lithographic performance of advanced thin resists

Mike Williamson, Andrew Neureuther

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388285

KEYWORDS: Polymers, Etching, Scanning electron microscopy, Dendrimers, Semiconducting wafers, Manufacturing, Lithography, Line edge roughness, Silicon, Oxides

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Proceedings Article | 15 November 1999 Paper

Integration of an adaptive parallel N-body solver into a particle-by-particle electron-beam interaction simulator

David Blackston, James Demmel, Andrew Neureuther, Bo Wu

Proceedings Volume 3777, (1999) https://doi.org/10.1117/12.370132

KEYWORDS: Particles, Statistical analysis, Electron beam lithography, Optical simulations, Monte Carlo methods, Electron beams, Computer simulations, Imaging systems, Image analysis, Direct methods

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Proceedings Article | 26 July 1999 Paper

Assessment of synchronous filtering as an alternative to phase-shifting masks at k1=0.4

Andrew Neureuther, Meng Li

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354353

KEYWORDS: Photomasks, Optical filters, Lithography, Lithographic illumination, Diffraction, Signal attenuation, Phase shifts, Resolution enhancement technologies, Image filtering, Binary data

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Proceedings Article | 25 June 1999 Paper

Calculating aerial images from EUV masks

Thomas Pistor, Andrew Neureuther

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351153

KEYWORDS: Photomasks, Mirrors, Aluminum, Extreme ultraviolet, Semiconducting wafers, Near field, Diffraction, Extreme ultraviolet lithography, Imaging systems, Coherence (optics)

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Proceedings Article | 11 June 1999 Paper

Methodology for modeling and simulating line-end shortening effects in deep-UV resist

Mosong Cheng, Ebo Croffie, Andrew Neureuther

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350275

KEYWORDS: Diffusion, Deep ultraviolet, Scanning electron microscopy, Photomasks, Data modeling, Calcium, Semiconducting wafers, Error analysis, Focus stacking software, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Efficient simulation of postexposure bake processes in STORM

Ebo Croffie, Mosong Cheng, Marco Zuniga, Andrew Neureuther

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350174

KEYWORDS: Diffusion, Computer simulations, Polymers, Numerical analysis, Finite element methods, Chemically amplified resists, Palladium, Image acquisition, Molecules, Photoresist processing

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Proceedings Article | 18 December 1998 Paper

Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering-bar optical proximity correction

Konstantinos Adam, Robert Socha, Mircea Dusa, Andrew Neureuther

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332862

KEYWORDS: Optical proximity correction, Photomasks, Semiconducting wafers, Reticles, Scattering, Error analysis, Scanning electron microscopy, Metrology, Dysprosium, Semiconductors

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Proceedings Article | 29 June 1998 Paper

Rapid simulation of silylation and the role of physical mechanisms in profile shapes

Marco Zuniga, Ebo Croffie, Andrew Neureuther

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312366

KEYWORDS: Diffusion, Silicon, Polymers, Computer simulations, Image processing, Differential equations, Photoresist processing, Systems modeling, Lithography, Silicon films

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Proceedings Article | 29 June 1998 Paper

LAVA: lithography analysis using virtual access

Chang Hsu, Rona Yang, Jeffery Cheng, Peter Chien, Victor Wen, Andrew Neureuther

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310748

KEYWORDS: Java, Lithography, Photomasks, Databases, Human-machine interfaces, Computer programming languages, Computer programming, Internet, Interfaces, Extreme ultraviolet

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Proceedings Article | 29 June 1998 Paper

Sensitivity and image quality of resists with electron-beam, ion-beam, and optical exposure

Nicholas Rau, Andrew Neureuther, Taro Ogawa, Randall Kubena, Fred Stratton, Charles Fields, C. Grant Willson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312465

KEYWORDS: Ion beams, Diffusion, Lithography, Scanning electron microscopy, Image quality, Optical lithography, Deep ultraviolet, Photoresist materials, Ions, Photoresist developing

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Proceedings Article | 7 July 1997 Paper

Simulating photomask edge roughness and corner rounding

Konstantinos Adam, Robert Socha, Thomas Pistor, Andrew Neureuther

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275911

KEYWORDS: Photomasks, Edge roughness, Lithography, Semiconducting wafers, Printing, Deep ultraviolet, Electromagnetism, Computer simulations, Glasses, Imaging systems

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Proceedings Article | 7 July 1997 Paper

Application of a general reaction/diffusion resist model to emerging materials with extension to nonactinic exposure

Marco Zuniga, Nicholas Rau, Andrew Neureuther

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275828

KEYWORDS: Diffusion, Data modeling, Deep ultraviolet, Semiconducting wafers, Critical dimension metrology, Calcium, Lithography, Scanning electron microscopy, Electron beams, FT-IR spectroscopy

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Proceedings Article | 7 July 1997 Paper

Simulation of reflective notching with TEMPEST

Thomas Pistor, Andrew Neureuther

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276039

KEYWORDS: Reflectivity, Printing, 3D printing, Antireflective coatings, Polarization

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Proceedings Article | 7 July 1997 Paper

Effect of the partial coherence on reflective notching

Robert Socha, Christopher Progler, Andrew Neureuther

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275979

KEYWORDS: Reflectivity, Photoresist materials, Optical lithography, Critical dimension metrology, Numerical simulations, Projection systems, Printing, Electromagnetic simulation, Scanning electron microscopy, Deep ultraviolet

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Proceedings Article | 14 June 1996 Paper

Postexposure bake characterization and parameter extraction for positive deep-UV resists through broad-area exposure experiments

Marco Zuniga, Andrew Neureuther

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241810

KEYWORDS: Diffusion, Data modeling, Calcium, FT-IR spectroscopy, Deep ultraviolet, Calibration, Floods, Photoresist processing, Lithographic equipment, Standards development

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Proceedings Article | 9 June 1995 Paper

Reaction diffusion kinetics in deep-UV positive-tone resist systems

Marco Zuniga, Gregory Wallraff, Andrew Neureuther

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210375

KEYWORDS: Diffusion, Semiconducting wafers, Deep ultraviolet, FT-IR spectroscopy, Floods, Statistical modeling, Performance modeling, Data modeling, Calcium, Image acquisition

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Proceedings Article | 26 May 1995 Paper

Role of illumination and thin film layers on the printability of defects

Robert Socha, Andrew Neureuther

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209283

KEYWORDS: Thin films, Coherence (optics), Transmittance, Tin, Photomasks, Printing, Opacity, Thin film coatings, Antireflective coatings, Phase shifts

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Proceedings Article | 26 May 1995 Paper

Three-dimensional reflective-notching simulation using multipole-accelerated physical optics approximation

Michael Yeung, Andrew Neureuther

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209271

KEYWORDS: Photoresist materials, Reflectivity, Scattering, Magnetism, Multiple scattering, Reflection, Computer simulations, 3D modeling, Electromagnetic scattering, Polarization

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Proceedings Article | 26 May 1995 Paper

Focus shift and process latitude of contact holes on attenuated phase-shifting masks

Alfred Wong, Richard Ferguson, Ronald Martino, Andrew Neureuther

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209278

KEYWORDS: Electroluminescence, Photomasks, Phase shifts, Binary data, Electromagnetism, Deep ultraviolet, Image processing, Transmittance, Printing, Glasses

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Proceedings Article | 26 May 1995 Paper

Effects of wafer topography on the formation of polysilicon gates

Robert Socha, Alfred Wong, Myron Cagan, Zoran Krivokapic, Andrew Neureuther

Proceedings Volume 2440, (1995) https://doi.org/10.1117/12.209268

KEYWORDS: Tin, Picture Archiving and Communication System, Reflectivity, Photoresist materials, Semiconducting wafers, Oxides, Ray tracing, Scanning electron microscopy, Antireflective coatings, Photoresist processing

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Proceedings Article | 7 December 1994 Paper

Large-area optical proximity correction using pattern-based corrections

David Newmark, Sheila Vaidya, Jakub Segen, Andrew Neureuther

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195835

KEYWORDS: Optical proximity correction, Photomasks, Optimization (mathematics), Photomask technology, Algorithm development, Pattern recognition, Detection and tracking algorithms, Resolution enhancement technologies, Linear filtering, Computer aided design

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Proceedings Article | 17 May 1994 Paper

Sample-3D benchmarks including high-NA and thin-film effects

John Helmsen, Michael Yeung, Derek Lee, Andrew Neureuther

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175442

KEYWORDS: Photoresist materials, Optical lithography, Thin films, Etching, Photoresist developing, Computer simulations, Plasma etching, Anisotropy, Algorithm development, Ions

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Proceedings Article | 17 May 1994 Paper

Polarization and edge effects in photolithographic masks using three-dimensional rigorous simulation

Alfred Wong, Andrew Neureuther

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175446

KEYWORDS: Polarization, Photomasks, Printing, Diffraction, Glasses, Quartz, Electromagnetism, Metals, Dielectric polarization, Computer simulations

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Proceedings Article | 17 May 1994 Paper

Phase-shifter edge effects on attenuated phase-shifting mask image quality

Alfred Wong, Richard Ferguson, Andrew Neureuther

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175406

KEYWORDS: Glasses, Scattering, Photomasks, Phase shifts, Image quality, Printing, Electromagnetic scattering, Electromagnetism, Light scattering, Deep ultraviolet

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Proceedings Article | 17 May 1994 Paper

Investigation of proximity effects for a rim phase-shifting mask printed with annular illumination

David Newmark, Eric Tomacruz, Sheila Vaidya, Andrew Neureuther

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175428

KEYWORDS: Phase shifts, Silicon, Photomasks, Diffusion, Semiconducting wafers, Critical dimension metrology, Deep ultraviolet, Scanning electron microscopy, Lithographic illumination, Optical lithography

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Proceedings Article | 16 May 1994 Paper

Diffusion effects in chemically amplified deep-UV resists

Marco Zuniga, Eric Tomacruz, Andrew Neureuther

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175349

KEYWORDS: Diffusion, Deep ultraviolet, Photomasks, Systems modeling, Super resolution, Phase shifts, Computer simulations, Electronics, Analytical research, Computer engineering

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Proceedings Article | 15 February 1994 Paper

Printability of phase-shift defects using a perturbational model

Robert Socha, Andrew Neureuther

Proceedings Volume 2087, (1994) https://doi.org/10.1117/12.167269

KEYWORDS: Quartz, Phase shifts, Photomasks, Photomask technology, Diffraction, Semiconducting wafers, Data modeling, Solids, Manufacturing, Lithography

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Proceedings Article | 8 August 1993 Paper

Extension of the Hopkins theory of partially coherent imaging to include thin-film interference effects

Michael Yeung, Derek Lee, Robert Lee, Andrew Neureuther

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150443

KEYWORDS: Thin films, Photoresist materials, Diffraction, Optical lithography, Projection systems, Coherence imaging, Wave propagation, Scattering, Spatial filters, Information operations

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Proceedings Article | 8 August 1993 Paper

Improvement of the physical-optics approximation for topography simulation in optical lithography

Michael Yeung, Andrew Neureuther

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150480

KEYWORDS: Multiple scattering, Optical lithography, Wave propagation, Near field diffraction, Diffraction, Photoresist materials, Reflection, Optical simulations, Scattering, Near field optics

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Proceedings Article | 8 August 1993 Paper

Three-dimensional lithography cases for exploring technology solutions and benchmarking simulators

John Helmsen, Andrew Neureuther

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150438

KEYWORDS: Etching, Optical spheres, Computer simulations, Lithography, Optical lithography, Phase shifts, Ray tracing, Photomasks, Numerical analysis, Reflectivity

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Proceedings Article | 24 June 1993 Paper

Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/EUV projection lithography

Khanh Nguyen, Alfred Wong, Andrew Neureuther, David Attwood

Proceedings Volume 1924, (1993) https://doi.org/10.1117/12.146524

KEYWORDS: Photomasks, Multilayers, Reflectivity, Coating, Gold, Germanium, Carbon, Radio propagation, Projection lithography, Optical lithography

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Proceedings Article | 26 March 1993 Paper

Edge effects in phase-shifting masks for 0.25-um lithography

Alfred Wong, Andrew Neureuther

Proceedings Volume 1809, (1993) https://doi.org/10.1117/12.142143

KEYWORDS: Photomasks, Polarization, Glasses, Diffraction, Phase shifts, Scattering, Etching, Electromagnetic simulation, Magnetism, Lithography

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Proceedings Article | 1 June 1992 Paper

Gradient phase-shifter transitions fabricated by ion milling

Anton Pfau, Edward Scheckler, David Newmark, Andrew Neureuther

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130354

KEYWORDS: Ions, Etching, Photoresist materials, Photomasks, Phase shifts, Computer simulations, Ion beams, Optical lithography, Scanning electron microscopy, Photomicroscopy

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Proceedings Article | 1 June 1992 Paper

Computer-aided design tool for phase-shifting masks

David Newmark, Andrew Neureuther, Anton Pfau

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130307

KEYWORDS: Photomasks, Optical lithography, Computer aided design, Image quality, Computing systems, Phase shifts, Printing, Process control, Quality measurement, 3D image processing

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Proceedings Article | 1 June 1992 Paper

Polarization effects in mask transmission

Alfred Wong, Andrew Neureuther

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130320

KEYWORDS: Dielectric polarization, Polarization, Phase shifts, Photomasks, Reflectivity, Diffraction, Glasses, Reflection, Optical lithography, Oxides

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Polarization and interface reflection effects are examined for technology issues in mask making of chrome edge shape, overcoating, double phase-shifting removal of defects, and reflective masks. This study is based on the massively parallel rigorous electromagnetic simulator TEMPEST1, with extensions to include the TM polarization and boundary conditions for outgoing waves in optical materials. The analysis was carried out on a CM-2 connection machine with remote electronic access. A local workstation was used to write and preview the geometry as well as process images from files of diffraction efficiencies downloaded to the workstation from the network. Through this remote analysis procedure, the four proto-typical mask case studies described by Doi et al.2 were examined for polarization and boundary condition effects. For chrome masks of one wavelength wide opening in a IX system at 0.248 |im, moderate differences between the TE and the TM polarizations were observed in the peak intensities (10%). The TM polarization in general showed higher transmission and lower sidelobes. The two polarizations showed a similar increase in linewidth and peak intensity with decreasing chrome edge slope. The difference was not as pronounced for a 5X system at 0.365 |Lim. Overcoating chrome masks with anti-reflection layers improved resolution for both polarizations. For 5X chromeless phase-shifting masks at 0.365 pm, neither polarization effect nor phase-shifter edge slope was important. The peak intensity at the phase-shifting section changed by only 1% and the linewidth varied by less than 2% when the phase-shifter edge slope changed from 90° to 45°, keeping the mid-points of the phase-shifter edge fixed. To remove defects on such masks by double phase-shifting may drop the intensity level to 70% of the clear field value for a 0.1 X/NA sized defect. For IX reflective masks at one wavelength, both polarizations displayed similar behaviors. These reflective masks with built-in material-based phase-shifting improved the image slope, and the TM polarization was found to have slightly less ringing than the TE polarization.

Proceedings Article | 1 January 1992 Paper

Continuous-slope phase-shift transition

Anton Pfau, Edward Scheckler, David Newmark, Andrew Neureuther

Proceedings Volume 1604, (1992) https://doi.org/10.1117/12.56953

KEYWORDS: Etching, Photomasks, Ions, Ion beams, Computer simulations, Phase shifts, Optical simulations, Photoresist materials, Printing, Lithography

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Proceedings Article | 1 January 1992 Paper

Phase-shifting mask design tool

David Newmark, Andrew Neureuther

Proceedings Volume 1604, (1992) https://doi.org/10.1117/12.56946

KEYWORDS: Photomasks, Phase shifts, Scanning electron microscopy, Computer aided design, Printing, Projection systems, Information operations, Silicon, Photography, Optical lithography

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Proceedings Article | 1 July 1991 Paper

Exploration of fabrication techniques for phase-shifting masks

Anton Pfau, William Oldham, Andrew Neureuther

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44778

KEYWORDS: Phase shifts, Photomasks, Absorption, Quartz, Etching, Refraction, Optical lithography, Chromium, Fabrication, Photoresist materials

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Proceedings Article | 1 July 1991 Paper

Three-dimensional simulation of optical lithography

Kenny Toh, Andrew Neureuther

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44795

KEYWORDS: Photoresist materials, Computer simulations, Etching, Optical lithography, Algorithm development, 3D image processing, Opacity, Photoresist developing, Photomasks, Optical simulations

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Proceedings Article | 1 July 1991 Paper

Edge-profile, materials, and protective coating effects on image quality

Takeshi Doi, Karim Tadros, Birol Kuyel, Andrew Neureuther

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44446

KEYWORDS: Photomasks, Phase shifts, Coating, Glasses, Scattering, Image quality, Reflectivity, Refractive index, Metrology, Integrated circuits

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Proceedings Article | 1 July 1991 Paper

Experimental and simulation studies of alignment marks

Alfred Wong, Takeshi Doi, Diana Dunn, Andrew Neureuther

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44791

KEYWORDS: Optical alignment, Computer simulations, Photoresist materials, Silicon, Diffraction, Scattering, Optical lithography, Semiconducting wafers, Image quality, Thin film coatings

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Proceedings Article | 1 July 1991 Paper

Understanding metrology of polysilicon gates through reflectance measurements and simulation

Karim Tadros, Andrew Neureuther, Roberto Guerrieri

Proceedings Volume 1464, (1991) https://doi.org/10.1117/12.44433

KEYWORDS: Semiconducting wafers, Reflectivity, Oxides, Refractive index, Metrology, Electromagnetic scattering, Wafer-level optics, Diffraction, Optical microscopes, Integrated circuits

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Proceedings Article | 1 July 1991 Paper

Design methodology for dark-field phase-shifted masks

Kenny Toh, Giang Dao, Henry Gaw, Andrew Neureuther, Larry Fredrickson

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44799

KEYWORDS: Photomasks, Phase shifts, Critical dimension metrology, Optical lithography, Semiconducting wafers, Scanning electron microscopy, Lithography, Diffusion, Composites, Printing

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Proceedings Article | 1 June 1991 Paper

Resist parameter extraction with graphical user interface in X

Anita Chiu, Richard Ferguson, Takeshi Doi, Alfred Wong, Nelson Tam, Andrew Neureuther

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46412

KEYWORDS: Data modeling, Semiconducting wafers, Human-machine interfaces, Statistical modeling, Photoresist processing, Picture Archiving and Communication System, Data processing, Process modeling, Deep ultraviolet, Interference (communication)

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Proceedings Article | 1 March 1991 Paper

Modeling phase-shifting masks

Andrew Neureuther

Proceedings Volume 1496, (1991) https://doi.org/10.1117/12.46757

KEYWORDS: Phase shifting, Photomasks, Point spread functions, Phase shifts, Coherence (optics), Information operations, Optical lithography, Semiconducting wafers, Physical phenomena, Composites

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Proceedings Article | 1 June 1990 Paper

Investigation of reflective notching with massively parallel simulation

Karim Tadros, Andrew Neureuther, John Gamelin, Roberto Guerrieri

Proceedings Volume 1264, (1990) https://doi.org/10.1117/12.20197

KEYWORDS: Reflectivity, Optical lithography, Picture Archiving and Communication System, Specular reflections, Reflection, Photoresist materials, Silicon, Refraction, Absorption, Computer simulations

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Proceedings Article | 1 June 1990 Paper

Investigation of the exposure and bake of a positive acting resist with chemical amplification

Richard Ferguson, Chris Spence, Elsa Reichmanis, Larry Thompson, Andrew Neureuther

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20086

KEYWORDS: Absorption, Chemical reactions, Absorbance, FT-IR spectroscopy, Data modeling, Temperature metrology, Industrial chemicals, Deep ultraviolet, Transmittance, Photoresist processing

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Showing 5 of 223 publications

Conference Committee Involvement (10)

Design-Technology Co-optimization XV

22 February 2021 | Online Only, California, United States

Design-Process-Technology Co-optimization for Manufacturability XIV

26 February 2020 | San Jose, California, United States

Design-Process-Technology Co-optimization for Manufacturability XIII

27 February 2019 | San Jose, California, United States

Design-Process-Technology Co-optimization for Manufacturability XII

28 February 2018 | San Jose, California, United States

Design-Process-Technology Co-optimization for Manufacturability XI

1 March 2017 | San Jose, California, United States

Showing 5 of 10 Conference Committees

Course Instructor

SC102: Optical Lithography Modeling

This course presents the theory and applications of optical lithography simulation tools. Using examples, practical applications to typical material and image problems will be discussed.

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