Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology

Yuan He; Erik Byers; Scott Light; Danielle Hines; Anton Devilliers; Mike Hyatt; Jianming Zhou; Vinay Nair; Zongchang Yu; Yu Cao; Xu Xie; Wenjin Shao; Rafael Aldana; Ronald Goossens; Chang-Qun Ma; Junwei Lu; Hua-yu Liu; Chris Aquino; Peter Engblom; Tjitte Nooitgedagt; Eric Janda

doi:10.1117/12.848255

3 March 2010 Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology

Yuan He, Erik Byers, Scott Light, Danielle Hines, Anton Devilliers, Mike Hyatt, Jianming Zhou, Vinay Nair, Zongchang Yu, Yu Cao, Xu Xie, Wenjin Shao, Rafael Aldana, Ronald Goossens, Chang-Qun Ma, Junwei Lu, Hua-yu Liu, Chris Aquino, Peter Engblom, Tjitte Nooitgedagt, Eric Janda

Author Affiliations +

Proceedings Volume 7640, Optical Microlithography XXIII; 764014 (2010) https://doi.org/10.1117/12.848255
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Scanner matching based on wafer data has proven to be successful in the past years, but its adoption into production has been hampered by the significant time and cost overhead involved in obtaining large amounts of statistically precise wafer CD data. In this work, we explore the possibility of optical model based scanner matching that maximizes the use of scanner metrology and design data and minimizes the reliance on wafer CD metrology. A case study was conducted to match an ASML ArF immersion scanner to an ArF dry scanner for a 6Xnm technology node. We used the traditional, resist model based matching method calibrated with extensive wafer CD measurements and derived a baseline scanner manipulator adjustment recipe. We then compared this baseline scanner-matching recipe to two other recipes that were obtained from the new, optical model based matching method. In the following sections, we describe the implementation of both methods, provide their predicted and actual improvements after matching, and compare the ratio of performance to the workload of the methods. The paper concludes with a set of recommendations on the relative merits of each method for a variety of use cases.

Citation Download Citation

Yuan He, Erik Byers, Scott Light, Danielle Hines, Anton Devilliers, Mike Hyatt, Jianming Zhou, Vinay Nair, Zongchang Yu, Yu Cao, Xu Xie, Wenjin Shao, Rafael Aldana, Ronald Goossens, Chang-Qun Ma, Junwei Lu, Hua-yu Liu, Chris Aquino, Peter Engblom, Tjitte Nooitgedagt, and Eric Janda "Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology", Proc. SPIE 7640, Optical Microlithography XXIII, 764014 (3 March 2010); https://doi.org/10.1117/12.848255

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available