Paper
2 April 2011 eMET: 50 keV electron multibeam mask exposure tool
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Abstract
Basic concept and targeted throughput values for IMS Nanofabrication's 50keV electron multibeam Mask Exposure Tool called eMET are outlined and detailed specifications of an eMET Proof-of-Concept Tool are presented. Recent results as obtained with electron and ion multi-beam projection test systems are described and compared with exposure simulations. Exposures were concentrated on ILT as well as OPC test patterns. Good agreement between test system exposures and simulation results is shown proving the accuracy of the theoretical predictions. Aerial image simulations for eMET demonstrate its capability to fully resolve complex patterns down to the 8 nm mask technology node.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christof Klein, Jan Klikovits, Hans Loeschner, and Elmar Platzgummer "eMET: 50 keV electron multibeam mask exposure tool", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700C (2 April 2011); https://doi.org/10.1117/12.879419
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Optical proximity correction

Critical dimension metrology

Photomasks

Ions

Optical simulations

Nanofabrication

Projection systems

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