Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction

Jin Choi; Suk Jong Bae; Hee Bom Kim; B. G. Kim; Han Ku Cho

doi:10.1117/12.898856

13 October 2011 Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction

Jin Choi, Suk Jong Bae, Hee Bom Kim, B. G. Kim, Han Ku Cho

Author Affiliations +

Proceedings Volume 8166, Photomask Technology 2011; 81661Z (2011) https://doi.org/10.1117/12.898856
Event: SPIE Photomask Technology, 2011, Monterey, California, United States

Abstract

By the development of double exposure technique and the EUV lithography the pattern placement error of photomask is interested because of its impact on size and position of wafer pattern. Among various sources to induce the pattern placement error, we have focused on the resist charging effect and shown that the resist charging effect generates pattern position error and CD variation. Based on experiment and simulation, we present quantitatively the dependence of position error on pattern density, pattern shape, and writing order. Furthermore, we have discussed the model to describe the charging effect and its agreement with experiment, and correction method to remove the resist charging effect.

Citation Download Citation

Jin Choi, Suk Jong Bae, Hee Bom Kim, B. G. Kim, and Han Ku Cho "Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction", Proc. SPIE 8166, Photomask Technology 2011, 81661Z (13 October 2011); https://doi.org/10.1117/12.898856

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