Paper
3 April 2012 Optical performance comparison between negative tone development and positive tone development
Seung-Hune Yang, Eun Sung Kim, Seongho Moon, Sooryong Lee, Seong-Woon Choi, Jungdal Choi
Author Affiliations +
Abstract
A negative tone development (NTD) process has been considered as apromising candidate for the smaller contact solution due to the remarkable image quality over a positive tone develop (PTD) process. However, it has not been investigated why NTD has higher optical performance than PTD yet. In this paper, image log slope (ILS) and mask error enhancement factor (MEEF) of binary and phase shift masks (PSM) are investigated with considering mask bias, target critical dimension (CD) and pattern pitch. It is found that the irradiance slope is steep and wafer CD variation from mask CD variation is small when the target CD is relatively smaller than pattern pitch. Mathematical model is derived to analyze image quality of binary mask and PSM.Three-dimensional mask effect is also considered with rigorous simulation.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seung-Hune Yang, Eun Sung Kim, Seongho Moon, Sooryong Lee, Seong-Woon Choi, and Jungdal Choi "Optical performance comparison between negative tone development and positive tone development", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832504 (3 April 2012); https://doi.org/10.1117/12.915931
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Binary data

Critical dimension metrology

Image quality

3D acquisition

Image processing

Mathematical modeling

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