Two-dimensional analytical modeling of non-linear charge injection in bottom-contact organic field-effect transistors

Franziska Hain; Michael Graef; Thomas Holtij; Alexander Kloes; Benjamin Iñiguez

doi:10.1117/12.2024117

18 September 2013 Two-dimensional analytical modeling of non-linear charge injection in bottom-contact organic field-effect transistors

Franziska Hain, Michael Graef, Thomas Holtij, Alexander Kloes, Benjamin Iñiguez

Author Affiliations +

Proceedings Volume 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI; 883118 (2013) https://doi.org/10.1117/12.2024117
Event: SPIE Organic Photonics + Electronics, 2013, San Diego, California, United States

Abstract

In this paper we present a 2D analytical model for the potential and the electric eld in bottom-contact organic eld-e ect transistors (OFETs) and an approach for calculation of the tunneling and thermionic source and drain injection current. The electrostatics are analytically calculated by solving the Poisson equation via the conformal mapping technique, based on that the currents were computed. Typical OFET behaviors like nonlinear injection and s-like shape are clearly visible. The model is compared with devices simulated by TCAD Sentaurus for various geometrical parameters.

Citation Download Citation

Franziska Hain, Michael Graef, Thomas Holtij, Alexander Kloes, and Benjamin Iñiguez "Two-dimensional analytical modeling of non-linear charge injection in bottom-contact organic field-effect transistors", Proc. SPIE 8831, Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, 883118 (18 September 2013); https://doi.org/10.1117/12.2024117

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