Effect of side-surface passivation on the electrical properties of metal-Cd(Zn)Te-metal structures

V. Sklyarchuk; P. Fochuk; Z. Zakharuk; R. Grill; V. Kutny; A. Rybka; D. Nakonechny; A. Zakharchenko; Ye. Nykoniuk; A. E. Bolotnikov; R. B. James

doi:10.1117/12.2023879

26 September 2013 Effect of side-surface passivation on the electrical properties of metal-Cd(Zn)Te-metal structures

V. Sklyarchuk, P. Fochuk, Z. Zakharuk, R. Grill, V. Kutny, A. Rybka, D. Nakonechny, A. Zakharchenko, Ye. Nykoniuk, A. E. Bolotnikov, R. B. James

Author Affiliations +

Proceedings Volume 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV; 88521I (2013) https://doi.org/10.1117/12.2023879
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

We explored the influence of Cd(Zn)Te detectors on the detector’s dark current for different methods of contact formation and passivation of the side surfaces. Our findings suggest that the dark current of a homogeneous detector with ohmic contacts is limited by the detector’s resistivity and the operating voltage. Detectors with a rectifying barrier have a markedly lower dark current at the same voltage and contact geometry than those without such a barrier, and their sides have a larger space charge than those of untreated ones. The major factor lowering the detector’s dark current is the formation of a rectifying barrier that occurs while creating contacts to the detector; the role of passivation of the lateral surface in this case is minimal. However, passivation plays the main role in the formation of leakage current in homogeneous detectors with ohmic contacts, where the uniformity of the electric field is important inside the detector, or in other studies used for determining the bulk resistivity of the detector material. We formed a surface-barrier structure on a semi-insulating Cr-Cd(Zn)Te-Cr crystal (n-type) with a resistivity of 10¹⁰ Ohm-cm at room temperature. The measured leakage current of this detector was less than 3 nA at 1500 V. We discuss our findings on this detector’s structural properties.

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V. Sklyarchuk, P. Fochuk, Z. Zakharuk, R. Grill, V. Kutny, A. Rybka, D. Nakonechny, A. Zakharchenko, Ye. Nykoniuk, A. E. Bolotnikov, and R. B. James "Effect of side-surface passivation on the electrical properties of metal-Cd(Zn)Te-metal structures", Proc. SPIE 8852, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV, 88521I (26 September 2013); https://doi.org/10.1117/12.2023879

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