In-line focus monitoring and fast determination of best focus using scatterometry

Steven Thanh Ha; Benjamin Eynon; Melany Wynia; Jeff Schmidt; Christian Sparka; Antonio Mani; Roie Volkovich; SeungHoon Yoon; David Tien; John Robinson; Saroja Ramamurthi

doi:10.1117/12.2047576

2 April 2014 In-line focus monitoring and fast determination of best focus using scatterometry

Steven Thanh Ha, Benjamin Eynon, Melany Wynia, Jeff Schmidt, Christian Sparka, Antonio Mani, Roie Volkovich, SeungHoon Yoon, David Tien, John Robinson, Saroja Ramamurthi

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Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90502Y (2014) https://doi.org/10.1117/12.2047576
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Persistently shrinking design rules and increasing process complexity require tight control and monitoring of the exposure tool parameters [1, 2]. While control of exposure dose by means of resist single metric measurements is common and widely adopted. Focus assessment and monitoring are usually more difficult to achieve. A diffused method to determine process specific dose and focus conditions is based on plotting Bossung curves from single CD-SEM measurements and choosing the best focus setting to obtain the desired target CD with the widest useful window. With this approach there is no opportunity to build a data flow architecture that can enable continuous focus monitoring on nominal production wafers [3-5]. KLA-Tencor has developed a method to enable in-line monitoring of scanner focus on production wafers by measuring resist profile shapes on grating targets using scatterometry, and analyzing the information using AcuShape^TM and K-T Analyzer^TM software. This methodology is based on a fast and robust determination of best scanner focus by analyzing focus-exposure matrices (FEMs). This paper will demonstrate the KT CDFE and FEM Analysis methods and their application in production environment.

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Steven Thanh Ha, Benjamin Eynon, Melany Wynia, Jeff Schmidt, Christian Sparka, Antonio Mani, Roie Volkovich, SeungHoon Yoon, David Tien, John Robinson, and Saroja Ramamurthi "In-line focus monitoring and fast determination of best focus using scatterometry", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502Y (2 April 2014); https://doi.org/10.1117/12.2047576

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KEYWORDS

Semiconducting wafers

Scanners

Scatterometry

Optical design

Scatter measurement

Finite element methods

Metrology

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