Experimental And Theoretical X-Ray Absorption Near-Edge Study Of III-V Compound Semiconductor Materials

C Schwartz; T L Cole; A K Green; P J Love; Victor Rehn

doi:10.1117/12.945476

11 July 1988 Experimental And Theoretical X-Ray Absorption Near-Edge Study Of III-V Compound Semiconductor Materials

C Schwartz, T L Cole, A K Green, P J Love, Victor Rehn

Proceedings Volume 0911, X-Ray and Vacuum Ultraviolet Interaction Data Bases, Calculations, and Measurements; (1988) https://doi.org/10.1117/12.945476
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

We report experimental and theoretical near-edge x-ray absorption fine structure (NEXAFS) spectra of clean and arsenic-capped gallium arsenide and the pseudo-binary alloy indium-gallium arsenide. Experimental data were obtained using synchrotron-radiation total-photoelectron-yield spectroscopy from the Ga(M2,3), As(M2,3), In(N2,3), and In(M4,5) edges. In addition, both C(K) and 0(K) NEXAFS spectra, and photon-stimulated ion-desorption mass spectra were obtained to assess and monitor the sample cleanliness. The samples studied were grown by molecular-beam epitaxy at China Lake and capped with arsenic for protection during transit to the Stanford Synchrotron-Radiation Laboratory. We have found by monitoring the As edges that heating the samples to 300 or 350Ã‚Â°C completely removes the arsenic cap. Also, we find that after evaporation of the As cap, the NEXAFS spectra are identical for capped and uncapped samples. Theoretical calculations of the arsenic NEXAFS spectra were performed using a full multiple-scattering theory. The inputs to the calculations were ab initio phase shifts, calculated using pseudopotentials and a model geometry. Theoretical calculations of the arsenic NEXAFS spectra of In0.53Ga0.47As crystals are reported also. Here, the calculations are performed by creating many model crystals that have the appropriate stoichiometry and averaging the resulting spectra.

Citation Download Citation

C Schwartz, T L Cole, A K Green, P J Love, and Victor Rehn "Experimental And Theoretical X-Ray Absorption Near-Edge Study Of III-V Compound Semiconductor Materials", Proc. SPIE 0911, X-Ray and Vacuum Ultraviolet Interaction Data Bases, Calculations, and Measurements, (11 July 1988); https://doi.org/10.1117/12.945476

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Arsenic

Chemical species

Gallium arsenide

Absorption

Crystals

Phase shifts

Scattering

Show All Keywords

Keywords/Phrases

Search In:

Publication Years