Paper
19 March 2015 Graphoepitaxial and chemoepitaxial methods for creating line-space patterns at 33nm pitch: comparison to a HVM process
Dan B. Millward, Gurpreet S. Lugani, Scott L. Light, Ardavan Niroomand, Phillip D. Hustad, Peter Trefonas, Dung Quach, Valeriy V. Ginzburg
Author Affiliations +
Abstract
Block copolymer directed self-assembly (BCP-DSA) may provide a less costly method of forming sub-38nm pitch line-space patterns relative to proven HVM methods, but DSA needs to provide equivalent or improved defect density and pattern quality to warrant consideration for displacing current HVM methods. This paper evaluates the process constraints of three DSA flows and compares the pattern quality after pattern transfer for each flow at its optimal process conditions to the same pattern created by a proven HVM process flow.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan B. Millward, Gurpreet S. Lugani, Scott L. Light, Ardavan Niroomand, Phillip D. Hustad, Peter Trefonas, Dung Quach, and Valeriy V. Ginzburg "Graphoepitaxial and chemoepitaxial methods for creating line-space patterns at 33nm pitch: comparison to a HVM process", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942304 (19 March 2015); https://doi.org/10.1117/12.2086693
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Cited by 4 scholarly publications.
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KEYWORDS
Etching

Semiconducting wafers

Line width roughness

Cadmium

Scanning electron microscopy

Directed self assembly

Dry etching

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