Paper
16 March 2016 Integrated layout based Monte-Carlo simulation for design arc optimization
Dongbing Shao, Larry Clevenger, Lei Zhuang, Lars Liebmann, Robert Wong, James Culp
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Abstract
Design rules are created considering a wafer fail mechanism with the relevant design levels under various design cases, and the values are set to cover the worst scenario. Because of the simplification and generalization, design rule hinders, rather than helps, dense device scaling. As an example, SRAM designs always need extensive ground rule waivers. Furthermore, dense design also often involves "design arc", a collection of design rules, the sum of which equals critical pitch defined by technology. In design arc, a single rule change can lead to chain reaction of other rule violations. In this talk we present a methodology using Layout Based Monte-Carlo Simulation (LBMCS) with integrated multiple ground rule checks. We apply this methodology on SRAM word line contact, and the result is a layout that has balanced wafer fail risks based on Process Assumptions (PAs). This work was performed at the IBM Microelectronics Div, Semiconductor Research and Development Center, Hopewell Junction, NY 12533
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongbing Shao, Larry Clevenger, Lei Zhuang, Lars Liebmann, Robert Wong, and James Culp "Integrated layout based Monte-Carlo simulation for design arc optimization", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 978106 (16 March 2016); https://doi.org/10.1117/12.2218636
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Cited by 1 scholarly publication.
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KEYWORDS
Monte Carlo methods

Semiconducting wafers

Semiconductors

Diffractive optical elements

Microelectronics

Process modeling

Protactinium

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