CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12001 > Article
Presentation
5 March 2022 Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik
Author Affiliations +
Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010B (2022) https://doi.org/10.1117/12.2626491
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
P-type doping in III-Nitrides has long presented a challenge in the development of wide bandgap optoelectronic devices. To date, magnesium is the only commercially viable acceptor in III-Nitrides. Beryllium has been considered a potential alternative to magnesium, and initial theoretical calculations as well as photoluminescence studies suggested that it is shallower than magnesium in GaN. However, to date, there have been no reliable or repeatable examples of p-type GaN:Be in literature. Here, we present a systematic study of MOCVD-grown GaN:Be with varied doping conditions. All samples show prominent UV and yellow luminescence, characteristic of beryllium acceptor in GaN.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, and Shadi Shahedipour-Sandvik "Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010B (5 March 2022); https://doi.org/10.1117/12.2626491
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
;
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Gallium nitride
Beryllium
Metalorganic chemical vapor deposition
Optoelectronics
Magnesium
Doping
Luminescence
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top