Dr. Emma Rocco Profile

Dr. Emma Rocco

at SUNY Polytechnic Institute

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Author

Publications (5)

Proceedings Article | 21 March 2023 Presentation

Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN

Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Alireza Lanjani, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, F. Shadi Shahedipour-Sandvik

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2668384

KEYWORDS: Gallium nitride, Beryllium, Metalorganic chemical vapor deposition, Sapphire, Photoluminescence, Magnesium, Electrical conductivity, Dopants, Chemical vapor deposition

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Proceedings Article | 5 March 2022 Presentation

Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN

Benjamin McEwen, Michael Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis Demchenko, Shadi Shahedipour-Sandvik

Proceedings Volume PC12001, PC120010B (2022) https://doi.org/10.1117/12.2626491

KEYWORDS: Gallium nitride, Metalorganic chemical vapor deposition, Beryllium, Optoelectronics, Magnesium, Luminescence, Doping, Ultraviolet radiation, Toxicity, Optoelectronic devices

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Proceedings Article | 5 March 2021 Presentation

Cs-free N-polar III-nitride photocathode detectors with high quantum efficiency: role of impurity incorporation at interfaces and planes

Emma Rocco, Kasey Hogan, Vincent Meyers, Ben McEwen, Lloyd Douglas Bell, F. Shadi Shahedipour-Sandvik

Proceedings Volume 11686, 116861B (2021) https://doi.org/10.1117/12.2578627

KEYWORDS: Signal detection, Gallium nitride, Ultraviolet radiation, Cesium, Silicon, Scattering, Reliability, Quantum efficiency, Interfaces, Sensors

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Proceedings Article | 13 March 2019 Presentation

Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation)

Emma Rocco, Isra Mahaboob, Kasey Hogan, Sean Tozier, Vincent Meyers, Ben McEwen, Steven Novak, Baishakhi Mazumder, L. D. Bell, F. Shadi Shahedipour-Sandvik

Proceedings Volume 10918, 109180Y (2019) https://doi.org/10.1117/12.2510035

KEYWORDS: Gallium nitride, Magnesium, Nitrogen, Gallium, Sensors, Quantum efficiency, Polarization, Field effect transistors, Light emitting diodes, Doping

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Proceedings Article | 14 March 2018 Presentation

A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (Conference Presentation)

Kasey Hogan, Sebastian Metzner, Frank Bertram, Isra Mahaboob, Emma Rocco, F. Shahedipour-Sandvik, Anja Dempewolf, Jürgen Christen

Proceedings Volume 10532, 105320V (2018) https://doi.org/10.1117/12.2290249

KEYWORDS: Visualization, Vapor phase epitaxy, Interfaces, Gallium nitride, Epitaxial lateral overgrowth, Metalorganic chemical vapor deposition, Luminescence, Microscopy, Sapphire, Silica

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