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Sub 32-nm pitch line-space features with good within-wafer and local CD uniformity and tight line-end tip-tip spacing remains a challenge for EUV patterning technology. Maintaining line width and tip-tip spacing of exposed dimensions is a challenge for etch, leading to design limitations and increasing complexity for multiple modules. Applied Materials SculptaTM pattern shaping capability offers an alternative solution to these EUV patterning challenges. We report on several advances to this technology. (1) The ideal hardmask and etch material stack has been studied to improve tip-tip performance of 26-nm pitch line-space features with superior profile and CD control. (2) Using atomic layer deposition combined with Sculpta pattern shaping, a new technique has been demonstrated for EUV contact holes which can uniformly shrink CD in one direction and elongate in the other. This offers an attractive solution to improve uniformity of vias with sub 20nm CD, by starting from wider dimensions. (3) Sculpta pattern shaping technology has evolved to demonstrate a new capability for significantly improving rectangularity of line-end features and contact holes, in addition to unidirectio
Yung-Chen Lin,Huaxiang Li,Kevin Anglin, andSteven Sherman
"Pattern shaping optimization and applications", Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3010957
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Yung-Chen Lin, Huaxiang Li, Kevin Anglin, Steven Sherman, "Pattern shaping optimization and applications," Proc. SPIE PC12958, Advanced Etch Technology and Process Integration for Nanopatterning XIII, (10 April 2024); https://doi.org/10.1117/12.3010957