Direct print extreme ultraviolet (EUV) has proven effective for pitch scaling and design rules flexibility. As feature size shrinks, stochastic noise poses challenges that demand innovative solutions. In this abstract, we present a novel approach known as pattern shaping , that not only addresses these challenges but also facilitates new opportunities for advanced patterning strategies. Integrating pattern shaping applications into the process flow reduces process complexity, eliminates the need for additional EUV patterning layers, paves the way for pushing lithographic print boundaries, and enhances the wafer yield. This accelerates the achievement of the technology readiness milestones.
Sub 32-nm pitch line-space features with good within-wafer and local CD uniformity and tight line-end tip-tip spacing remains a challenge for EUV patterning technology. Maintaining line width and tip-tip spacing of exposed dimensions is a challenge for etch, leading to design limitations and increasing complexity for multiple modules. Applied Materials SculptaTM pattern shaping capability offers an alternative solution to these EUV patterning challenges. We report on several advances to this technology. (1) The ideal hardmask and etch material stack has been studied to improve tip-tip performance of 26-nm pitch line-space features with superior profile and CD control. (2) Using atomic layer deposition combined with Sculpta pattern shaping, a new technique has been demonstrated for EUV contact holes which can uniformly shrink CD in one direction and elongate in the other. This offers an attractive solution to improve uniformity of vias with sub 20nm CD, by starting from wider dimensions. (3) Sculpta pattern shaping technology has evolved to demonstrate a new capability for significantly improving rectangularity of line-end features and contact holes, in addition to unidirectio
Patterning cost and complexity continues to rise with every node. Although EUV lithography has extended dimensional scaling, its limitations have required the industry to implement multi-EUV and other complex patterning schemes. Single exposure EUV patterning is limited by stochastic defects at sub-36nm pitch. Also, counter-scaling between pitch and tip-to-tip spacing limits how close patterned features can be packed in the non-preferred direction. Multi-EUV patterning schemes significantly increase cost while also introducing Edge Placement Errors (EPE). We discuss here an innovative pattern shaping capability which can elongate pre-defined line/space and hole patterns to address these challenges. We will discuss various process knobs including reactive chemistry and material selectivity which can be tuned to allow precision pattern shaping. We will also show how this capability can be used for sidewall processing for applications such as asymmetric spacer removal. Directional pattern shaping has the potential to be a powerful tool in the patterning engineer’s toolbox to help further extend Moore’s law.
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