The role of the aging in the photoluminescence (PL) of stain etched porous silicon (PS) layers and its behaviour at
different temperatures have been studied. The photoluminescence has been measured at different temperatures showing
the influence of the phonons in the intensity of the emissions and the lifetimes. Two contributions to the
photoluminescence spectra have been found: one due to quantum confinement effects and the other one due to the
presence of non-bridging oxygen hole centre defects. There is no evidence of energetic shifts on the maximum at
different temperatures.
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