Mr. Carles Monasterio Balcells Profile

Carles Monasterio Balcells

at Instrument Systems Optische Messtechnik GmbH

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Publications (1)

Proceedings Article | 20 June 2024 Presentation + Paper

High resolution and metrologically traceable characterization of semiconductor lasers at SWIR wavelength with InGaAs sensors

Amir Sharghi, Carles Monasterio Balcells, Thomas Limmer

Proceedings Volume 13002, 130020H (2024) https://doi.org/10.1117/12.3017544

KEYWORDS: Semiconductor lasers, Short wave infrared radiation, Sensors, Indium gallium arsenide, Photodiodes, Calibration, Vertical cavity surface emitting lasers, Temperature metrology, Spectrum analysis, Metrology

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Semiconductor lasers have become the light source of choice in many applications. For example, IR VCSELs are widely used for sensing purposes in consumer electronics, replacing the LEDs. Advantages in manufacturing and the ability to tailor the properties to the requirement of different applications were the key success. On the other hand, longer wavelength i.e. SWIR (Short-wave Infrared) are appearing and expected to rise further since they create new possibilities and applications. Eventually, detailed and accurate electrical and optical characteristics of these illumination sources is essential. LIV curves and spectrum analysis are fundamental measurement to determine the operating characteristics. They are widely used at various stages since it is critical to identify failed DUTs early in the manufacturing process. In this study, we introduce complete measurement setup for LIV with spectrum analysis of SWIR semiconductor lasers. These lasers have wavelength longer than 1000nm and therefor GaAs or silicon based sensors are not applicable. Hereby InGaAs sensors with appropriate optics and electronics are combined. Our measurement set up benefits from a highresolution array spectroradiometer, highly reflective integrating sphere and sensitive photodiode sensor. Further, the measurement setup is metrologically calibrated and is traceable to the international standards. Consequently, the LIV curves and spectrum of the DUT were measured at high spectral and electrical resolution. From LIV curves power conversion efficiency, threshold current, slope efficiency, kinks and rollover point were further calculated and analyzed. At the same time, the DUT temperature was controlled and tempered at different temperatures. The influence of the temperature on the laser performance, characteristics and properties is thoroughly analyzed. Extension and further atomization of our measurement routine is required to facilitate the semiconductor lasers development and as well to speed up the industrialization of the semiconductor lasers.

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