The emergence of extreme ultraviolet (EUV) sources utilizing 13.5 nm for high volume manufacturing played a role in upgrading semiconductor technology once again. The demand for photoresists to satisfy smaller and more advanced nodes is becoming increasingly important and challenging. The aim of this work is to investigate the chromatographic techniques to separate random copolymer for photoresist materials according to chemical composition. A systematic study is reported for a fundamental understanding of how the molecular weight distribution and chemical composition of polymers included in photoresist affect lithography performance. Compared to other conventional methods such as GPC, the new approach in this study is accurate and high resolution, and can be utilized to identify and quantify the organic polymer in photoresist
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