A five-channel silicon etched diffraction gratings (EDGs) working in the O-band was demonstrated in this paper. The device has a channel spacing of 20 nm and occupies a footprint of 180μm×120μm with an insertion loss of 5.3dB. Integrated heaters were designed to compensate the center wavelength shifts brought from fabrication errors. A tuning efficiency of 0.358nm/mA was obtained finally.
Heterogeneous integration of III–V materials with silicon-on-insulator (SOI) waveguide circuitry by an adhesive die-to-wafer bonding process has been proposed as a solution to Si-based lasers and photodetectors. Here, we present the design and optimization of an InGaAs PIN photodetector vertically coupled with the underlying SOI waveguide, which could be readily fabricated using this bonding process. With the help of grating couplers, a thick bonding layer of 2.5 μm is applied, which inherently avoids the risk of low-bonding yield suffering in the evanescent coupling counterpart. An anti-reflection layer is also introduced between the bonding layer and the III–V layer stack to relieve the accuracy requirement for the bonding layer thickness. Besides, by optimizing the structure parameters, a high-absorption efficiency of 82% and a wide optical 1dB-bandwidth of 220nm are obtained. The analysis shows that the detection bandwidth of the present surface-illuminated photodetector is generally limited by transit-time in the i-InGaAs layer. The relationship of the detection bandwidth and the absorption efficiency versus the i-InGaAs layer thickness is presented for the ease of choosing proper structure parameters for specific applications. With the results presented here, the device can be readily fabricated.
We report a polarization-dependent reflector beyond normal incidence with a subwavelength nanoparticle chain. Polarization-dependent reflection with high reflectivity or high transmissivity can be obtained with this structure. Light waves of transverse electric/magnetic mode will be reflected, while the transverse magnetic/electric mode will transmit through. The structure shows a certain degree of tolerance of incident angle, technical fabrication, and even particle shape. We hope the low-loss and compact structure can find applications in photonic circuits such as gallium nitride-based light sources.
Grating couplers are widely investigated as a coupling interface between silicon-on-insulator waveguides and optical
fibers. In this work, novel grating couplers based on strip poly-Si are proposed. This structure utilizes the poly-Si gate
layer of the CMOS MOSFETs, and thus enables grating couplers integrated with CMOS circuits without adding any
additional masks and process steps. Simulation results show that a coupling efficiency over 60% can be achieved
between silicon-on-insulator waveguides and fibers.
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