The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH3 from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.