Prof. Enrico Bellotti Profile

Prof. Enrico Bellotti

Professor at Boston Univ

SPIE Involvement:

Conference Program Committee | Author

Publications (41)

Proceedings Article | 7 June 2024 Poster + Paper

First-principles study of the electronic properties of strained Hg1-xCdxTe alloys

Fatimah Alowa, Masahiko Matsubara, Chris Schaake, Enrico Bellotti

Proceedings Volume 13030, 130300G (2024) https://doi.org/10.1117/12.3013835

KEYWORDS: Alloys, Cadmium, Electrical properties, Mercury cadmium telluride, Semiconductors, Cadmium telluride

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Proceedings Article | 10 October 2023 Presentation + Paper

Quantum transport simulation of a mid-wave infrared Ga-based type-II superlattice for curved focal-plane arrays

John Glennon, Enrico Bellotti

Proceedings Volume 12687, 126870F (2023) https://doi.org/10.1117/12.2682192

KEYWORDS: Quantum efficiency, Alloys, Mid-IR, Superlattices, Quantum modeling, Gallium antimonide, Quantum simulation

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Proceedings Article | 10 October 2023 Paper

Monte Carlo modeling of HgCdTe avalanche photodiodes

Mike Zhu, Ilya Prigozhin, Pradip Mitra, Chris Schaake, Richard Scritchfield, Enrico Bellotti

Proceedings Volume 12687, 126870D (2023) https://doi.org/10.1117/12.2682181

KEYWORDS: Monte Carlo methods, Mercury cadmium telluride, Avalanche photodetectors, Modeling, Simulations, Ionization, 3D modeling, Mid-IR

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Proceedings Article | 15 June 2023 Presentation + Paper

Studies of spatial uniformity and jitter in SiC UV SPADs

Anand Sampath, Gregory Garrett, Jonathan Schuster, Jeremy Smith, Michael Derenge, Daniel Habersat, Brenda VanMil, Reza Gandhi, Sergei Dolinsky, Edwin Heilweil, Joshua Bienfang, Enrico Bellotti, Michael Wraback

Proceedings Volume 12512, 1251206 (2023) https://doi.org/10.1117/12.2663387

KEYWORDS: Silicon carbide, Single photon avalanche diodes, Avalanche photodetectors, Temporal resolution, Ultraviolet radiation

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Proceedings Article | 30 May 2022 Presentation

Study of temperature dependent carrier transport in Ga free T2SL photodetectors and its impact on performance

Enrico Bellotti, Francesco Bertazzi, Alberto Tibaldi, Jonathan Schuster, Jagmohan Bajaj, Meredith Reed

Proceedings Volume 12107, 121070S (2022) https://doi.org/10.1117/12.2634364

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We have performed a numerical study of the carrier transport properties in gallium-free strained-balanced InAs/InxAs1-xSb type-II superlattices (T2SL) intended for infrared detector applications. The motivation was to understand whether the performance of T2SL detectors is ultimately limited by fundamental or technological processes. We have employed a rigorous one-dimensional quantum mechanical transport model based on the non-equilibrium Green's function (NEGF) formalism that includes a k.p description of the electronic structure. This approach has allowed us to avoid making any a priori assumptions on the physical mechanism (tunneling, sequential tunneling or hopping) dominating the transport. We find that regardless of its nature and cause, the presence of positional and compositional disorder, introduced inherently during materials growth by layer thickness fluctuations, nonuniform antimony composition and segregation throughout the superlattice stack, significantly affects the vertical carrier transport properties. In particular, the minority carrier hole mobility is fundamentally limited by the nonideal disorder. Furthermore, upon reducing the temperature, holes become fully localized and transport occurs by hopping, which explains published measured photodetector data that demonstrates the quantum efficiency exhibiting a very strong temperature dependence that degrades as the temperature is reduced. We also found that the minority carrier electron mobility is largely unaffected by disorder, indicating the p-type absorbing layer as the preferred option. We have also performed simulations of typical nBn detectors with a simplified NEGF model based on the effective mass approximation and Büttiker-probe self-energies, which also allows us to explore the possibilities offered by quantum-corrected drift-diffusion approaches. We will present simulation examples of representative gallium-containing and gallium-free nBn structures intended for MWIR and LWIR photodetector applications. These examples will include calculations of I-V characteristics, SRH recombination rates and quantum efficiency.

Proceedings Article | 30 May 2022 Presentation + Paper

Infrared APD detectors for high bandwidth applications

A. D'Souza, V. Khalap, I. Baker, E. Zemaityte, I. Prighozin, E. Bellotti

Proceedings Volume 12091, 1209104 (2022) https://doi.org/10.1117/12.2619237

KEYWORDS: Sensors, Avalanche photodetectors, Semiconducting wafers, Monte Carlo methods, Signal detection, Mercury cadmium telluride, Readout integrated circuits, Particles, Diffusion, Manufacturing

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Proceedings Article | 27 May 2022 Presentation + Paper

Curving of large-format infrared sensors

Mark O'Masta, Binh-Minh Nguyen, Alexander Gurga, Trevor Sasse, Brian Hempe, Christian Neuhaus, Eric Clough, Jacob Hundley, Pamela Patterson, James Jenkins, Mary Chen, Gregory Jacques, Scott Linton, Francisco Perez, Colin Van Ysseldyk, Esther Wang, Yan Tang, Kenta Niwa, Tobias Schaedler, Alexandros Kyrtsos, John Glennon, Andreu Glasmann, Enrico Bellotti, Geoff McKnight

Proceedings Volume 12107, 121071S (2022) https://doi.org/10.1117/12.2618122

KEYWORDS: Sensors, Staring arrays, Mid-IR, Infrared sensors, Infrared imaging, Silicon, Spherical lenses, Monochromatic aberrations, Infrared radiation, Imaging systems

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Proceedings Article | 14 May 2018 Presentation + Paper

Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance

Ilya Prigozhin, Andreu Glasmann, Enrico Bellotti

Proceedings Volume 10624, 106240T (2018) https://doi.org/10.1117/12.2305127

KEYWORDS: Long wavelength infrared, Mercury cadmium telluride, Interfaces, Numerical simulations, Sensor performance, Infrared sensors, Sensors, Photodiodes, Diodes, Physics

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Proceedings Article | 9 May 2018 Presentation + Paper

Numerical and analytical modeling of bulk and surface generation recombination currents in InGaAs/InP SWIR photodiodes

Andreu Glasmann, Enrico Bellotti

Proceedings Volume 10624, 1062407 (2018) https://doi.org/10.1117/12.2305102

KEYWORDS: 3D modeling, Quantum efficiency, Short wave infrared radiation, Photodiodes, Electrons, Resistance, Sensors, Indium gallium arsenide

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Proceedings Article | 26 January 2018 Open Access

Understanding fundamental limitations of materials to enable advanced design

Meredith Reed, Jagmohan Bajaj, Francesco Bertazzi, Enrico Bellotti, Jonathan Schuster, Philip Perconti

Proceedings Volume 10540, 1054005 (2018) https://doi.org/10.1117/12.2300711

KEYWORDS: Instrument modeling, Superlattices, Semiconductors, Mercury cadmium telluride, Semiconductor materials, Long wavelength infrared, Scattering, Staring arrays, Light scattering, Measurement devices

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Proceedings Article | 26 June 2017 Presentation

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

Enrico Bellotti, Hanqing Wen, Stefano Dominici, Andreu Glasmann

Proceedings Volume 10177, 101771F (2017) https://doi.org/10.1117/12.2265894

KEYWORDS: Mercury cadmium telluride, Mid-IR, Indium gallium arsenide, Long wavelength infrared, Infrared detection, Crystals, Doping, Photodetectors, Infrared technology, Current controlled current source

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Proceedings Article | 19 May 2017 Paper

Towards noise-aware surrogate models of carrier population dynamics in optically excited GaN

Brent Kraczek, Sara Shishehchi, Enrico Bellotti

Proceedings Volume 10206, 102060O (2017) https://doi.org/10.1117/12.2261697

KEYWORDS: Data modeling, Statistical modeling, Interference (communication), Carrier dynamics, Polarization, Gallium nitride, Monte Carlo methods, Process modeling, Semiconductors, General packet radio service

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Proceedings Article | 16 May 2017 Presentation + Paper

Numerical modeling of a dark current suppression mechanism in IR detector arrays

Andreu Glasmann, Taylor Hubbard, Enrico Bellotti

Proceedings Volume 10177, 101770A (2017) https://doi.org/10.1117/12.2265901

KEYWORDS: Quantum efficiency, Diffusion, Detector arrays, Infrared detectors, Sensors, Numerical modeling

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Proceedings Article | 30 January 2017 Open Access

Accelerating technology innovations by early understanding of fundamental and technology limitations of material synthesis and device operation

Jagmohan Bajaj, Roger DeWames, Jonathan Schuster, Meredith Reed, Philip Perconti, Enrico Bellotti

Proceedings Volume 10111, 1011117 (2017) https://doi.org/10.1117/12.2261308

KEYWORDS: Laser sintering, Semiconductors, Instrument modeling, Infrared sensors, Long wavelength infrared, Sensors, Stereolithography, Mercury cadmium telluride, Semiconductor materials, Infrared technology

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Timely technology transition with minimal risk requires an understanding of fundamental and technology limitations of material synthesis, device operation and design controllable parameters. However, this knowledge-based approach requires substantial investment of resources in the Science and Technology (ST) stage of development. For low volume niche semiconductor technologies of Department of Defense (DoD) relevance, there is little drive for industry to expend their limited resources towards basic research simply because there is no significant return on investment. As a result, technology transition from ST to product development is often delayed, expensive and carries risks. The Army Research Laboratory (ARL) is addressing this problem by establishing a Center for Semiconductor Modeling of Materials and Devices (CSM) that brings together government, academia, and industry in a collaborative fashion to address research opportunities through its Open Campus initiative. This Center leverages combined core competencies of partner organizations, which include a broad knowledge base in modeling, and its validation; sharing of computational, characterization, materials growth and device processing resources; project continuity; and ‘extension of the bench’ via exchange of researchers between affiliated entities. A critical DoD technology is sensing in the infrared (IR) spectrum, where understanding of materials, devices and methods for sensing and processing IR information must continually improve to maintain superiority in combat. In this paper we focus on the historical evolution of IR technology and emphasize the need for understanding of material properties and device operation to accelerate innovation and shorten the cycle time, thereby ensuring timely transition of technology to product development and manufacturing. There are currently two competing IR technologies being pursued, namely the incumbent II-VI Hg₁- _xCd_xTe technology and the III-V Type 2 Superlattices (SLs) technology. A goal of the CSM is to develop physics based models for Type 2 SLs with the capability to timely understand the knowledge gap between what is built and what is designed.

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Proceedings Article | 17 June 2016 Paper

Analysis of the auger recombination rate in P+N−n−N−N HgCdTe detectors for hOT applications

J. Schuster, W. Tennant, E. Bellotti, P. Wijewarnasuriya

Proceedings Volume 9819, 98191F (2016) https://doi.org/10.1117/12.2224383

KEYWORDS: Mercury cadmium telluride, Sensors, Heterojunctions, Long wavelength infrared, Doping, Electrons, Cadmium, Instrument modeling, Infrared detectors, Diffusion

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Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually to temperatures at or below ~ 150K. Such low operating temperatures (T_op) impose very stringent requirements on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors, significant increases in T_op are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C). The most common HgCdTe IR detector architecture is the P⁺n heterostructure photodiode (where a capital letter indicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P⁺N−n−N−N heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with significantly lower dark diffusion current. The P⁺N−n−N−N heterostructure utilizes a very low doped AL, surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted, which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombination rate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers (and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics of the intrinsic dark currents in ideal P⁺N−n−N−N heterostructures, namely Auger recombination. Due to the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling techniques must be utilized to predict and understand the device operation, as analytical models do not exist for heterojunction devices.

Proceedings Article | 20 May 2016 Paper

Numerical modeling of extended short wave infrared InGaAs focal plane arrays

Andreu Glasmann, Hanqing Wen, Enrico Bellotti

Proceedings Volume 9819, 981906 (2016) https://doi.org/10.1117/12.2223442

KEYWORDS: Indium gallium arsenide, Short wave infrared radiation, Staring arrays, Infrared imaging, Infrared radiation, Numerical modeling, Indium, Sensors, Instrument modeling, Photodiodes

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Proceedings Article | 4 March 2016 Paper

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

Michele Goano, Francesco Bertazzi, Xiangyu Zhou, Marco Mandurrino, Stefano Dominici, Marco Vallone, Giovanni Ghione, Alberto Tibaldi, Marco Calciati, Pierluigi Debernardi, Fabrizio Dolcini, Fausto Rossi, Giovanni Verzellesi, Matteo Meneghini, Nicola Trivellin, Carlo De Santi, Enrico Zanoni, Enrico Bellotti

Proceedings Volume 9742, 974202 (2016) https://doi.org/10.1117/12.2216489

KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductors, Internal quantum efficiency, Optoelectronics, Quantum physics, Computer simulations, Nanostructures, Quantum wells, Electrons, Quantum efficiency, Phonons, Scattering, Monte Carlo methods

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Proceedings Article | 5 October 2015 Presentation

Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording)

Enrico Bellotti, Hanqing Wen, Benjamin Pinkie, Masahiko Matsubara, Francesco Bertazzi

Proceedings Volume 9555, 95550H (2015) https://doi.org/10.1117/12.2190357

KEYWORDS: Instrument modeling, Semiconductor materials, Sensors, Mercury cadmium telluride, Semiconductors, Physics, Systems modeling, Silicon, Germanium, Compound semiconductors

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Proceedings Article | 5 October 2015 Presentation

Optical absorption in 3D topological insulator Bi2Te3 with applications to THz detectors (Presentation Recording)

Parijat Sengupta, Enrico Bellotti

Proceedings Volume 9555, 95550F (2015) https://doi.org/10.1117/12.2190356

KEYWORDS: Ferromagnetics, Absorption, Terahertz radiation, Sensors, Dispersion, Crystals, Fermions, Modulation, Photodetectors, Video

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Proceedings Article | 28 August 2015 Paper

Heterojunction depth in P+-on-n eSWIR HgCdTe infrared detectors: generation-recombination suppression

J. Schuster, R. DeWames, E. DeCuir, E. Bellotti, N. Dhar, P. Wijewarnasuriya

Proceedings Volume 9609, 960904 (2015) https://doi.org/10.1117/12.2186043

KEYWORDS: Cadmium, Heterojunctions, Diffusion, Quantum efficiency, Mercury cadmium telluride, Arsenic, Sensors, Doping, Neodymium, Instrument modeling

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Proceedings Article | 24 June 2014 Paper

Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling

Adam Wichman, Roger DeWames, Enrico Bellotti

Proceedings Volume 9070, 907004 (2014) https://doi.org/10.1117/12.2050688

KEYWORDS: Modulation transfer functions, Indium gallium arsenide, 3D modeling, Spatial frequencies, Diodes, Diffusion, Sensors, Performance modeling, Numerical simulations, Neodymium

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Proceedings Article | 24 June 2014 Paper

New model for the ideal nBn infrared detector

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 9070, 907013 (2014) https://doi.org/10.1117/12.2054525

KEYWORDS: Sensors, Resistance, Indium arsenide, Photodiodes, Numerical simulations, Diffusion, Infrared detectors, Thermal modeling, Infrared sensors, Physics

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Proceedings Article | 24 June 2014 Paper

Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry

Adam Wichman, Roger DeWames, Enrico Bellotti

Proceedings Volume 9070, 907003 (2014) https://doi.org/10.1117/12.2050680

KEYWORDS: Diffusion, Diodes, Indium gallium arsenide, 3D modeling, Neodymium, Photodiodes, Numerical simulations, Quantum efficiency, Interfaces, Staring arrays

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Proceedings Article | 7 March 2014 Paper

Numerical simulation of III-nitride lattice-matched structures for quantum cascade lasers

Sara Shishehchi, Roberto Paiella, Enrico Bellotti

Proceedings Volume 8980, 89800T (2014) https://doi.org/10.1117/12.2040709

KEYWORDS: Monte Carlo methods, Quantum cascade lasers, Electrons, Scattering, Laser scattering, Gallium nitride, Phonons, Numerical simulations, Absorption, Quantum wells

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Proceedings Article | 7 March 2014 Paper

Numerical simulation of deep-UV avalanche photodetectors

Enrico Bellotti, Francesco Bertazzi

Proceedings Volume 8980, 89800R (2014) https://doi.org/10.1117/12.2040789

KEYWORDS: Ionization, Avalanche photodetectors, Scattering, Deep ultraviolet, Monte Carlo methods, Gallium nitride, Aluminum, Numerical simulations, Doping, Solids

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Proceedings Article | 27 February 2014 Paper

Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments

Francesco Bertazzi, Michele Goano, Marco Calciati, Xiangyu Zhou, Giovanni Ghione, Enrico Bellotti

Proceedings Volume 9003, 900310 (2014) https://doi.org/10.1117/12.2043234

KEYWORDS: Quantum wells, Light emitting diodes, Electron transport, Nanostructures, Internal quantum efficiency, Ultraviolet radiation, Indium gallium nitride, Solid state lighting, Polarization, Heterojunctions

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Proceedings Article | 19 September 2013 Paper

Multiscale modeling of photon detectors from the infrared to the ultraviolet

Enrico Bellotti, Jonathan Schuster, Benjamin Pinkie, Francesco Bertazzi

Proceedings Volume 8868, 88680R (2013) https://doi.org/10.1117/12.2028181

KEYWORDS: Instrument modeling, Systems modeling, Thermal modeling, Ultraviolet radiation, Sensors, Phonons, Infrared detectors, Monte Carlo methods, Physics, Performance modeling

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Proceedings Article | 18 June 2013 Paper

Large-scale numerical simulation of reduced-pitch HgCdTe infrared detector arrays

Benjamin Pinkie, Enrico Bellotti

Proceedings Volume 8704, 87042S (2013) https://doi.org/10.1117/12.2016186

KEYWORDS: Sensors, Quantum efficiency, Modulation transfer functions, Infrared detectors, Mercury cadmium telluride, Detector arrays, Numerical simulations, 3D modeling, Instrument modeling, Finite-difference time-domain method

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Proceedings Article | 18 June 2013 Paper

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

Jonathan Schuster, Enrico Bellotti

Proceedings Volume 8704, 87042Q (2013) https://doi.org/10.1117/12.2016496

KEYWORDS: Quantum efficiency, Mercury cadmium telluride, Numerical simulations, 3D modeling, Sensors, Finite-difference time-domain method, Oxides, Reflection, Antireflective coatings, Computer simulations

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Proceedings Article | 18 June 2013 Paper

Numerical simulation of InAs nBn infrared detectors with n-type barrier layers

Marion Reine, Benjamin Pinkie, Jonathan Schuster, Enrico Bellotti

Proceedings Volume 8704, 87041Y (2013) https://doi.org/10.1117/12.2016150

KEYWORDS: Sensors, Numerical simulations, Indium arsenide, Diffusion, Neodymium, Resistance, Infrared detectors, Photodiodes, Back illuminated sensors, Diodes

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Proceedings Article | 14 March 2013 Paper

A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN

Sara Shishehchi, Francesco Bertazzi, Enrico Bellotti

Proceedings Volume 8619, 86190H (2013) https://doi.org/10.1117/12.2008734

KEYWORDS: Scattering, Gallium nitride, Electronics, Monte Carlo methods, Phonons, Aluminum, Indium nitride, Aluminum nitride, Doping, Acoustics

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Proceedings Article | 14 March 2013 Paper

Auger recombination in bulk InGaN and quantum wells: a numerical simulation study

Francesco Bertazzi, Michele Goano, Enrico Bellotti

Proceedings Volume 8619, 86191G (2013) https://doi.org/10.1117/12.2008735

KEYWORDS: Quantum wells, Phonons, Indium gallium nitride, Light emitting diodes, Scattering, Nanostructures, Quantum dots, Crystals, Numerical simulations, Monte Carlo methods

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Proceedings Article | 31 May 2012 Paper

Numerical simulation of InAs/AlAsSb nBn detector arrays

Jonathan Schuster, Benjamin Pinkie, Marion Reine, Enrico Bellotti

Proceedings Volume 8353, 835330 (2012) https://doi.org/10.1117/12.919401

KEYWORDS: Diffusion, Quantum efficiency, Indium arsenide, Sensors, 3D modeling, Back illuminated sensors, Electrons, Numerical simulations, Detector arrays, Doping

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Proceedings Article | 26 August 2010 Paper

3D numerical analysis of As-diffused HgCdTe planar pixel arrays

Craig Keasler, Michele Moresco, Danilo D'Orsogna, Phil Lamarre, Enrico Bellotti

Proceedings Volume 7780, 77800J (2010) https://doi.org/10.1117/12.861107

KEYWORDS: Quantum efficiency, Diffusion, Mercury cadmium telluride, Detector arrays, Infrared radiation, Doping, Numerical simulations, Liquid phase epitaxy, Numerical analysis, Staring arrays

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Proceedings Article | 26 August 2010 Paper

HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase

F. T. Smith, P. Lamarre, J. Marciniec, S. Tobin, T. Parodos, P. LoVecchio, K. Wong, M. Reine, E. Bellotti, P. LeVan, A. Hahn, D. Bliss

Proceedings Volume 7780, 77800I (2010) https://doi.org/10.1117/12.861079

KEYWORDS: Diffusion, Arsenic, Mercury cadmium telluride, Diodes, Mercury, Photodiodes, Liquid phase epitaxy, Doping, Long wavelength infrared, Cadmium

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Proceedings Article | 11 March 2010 Paper

First-principles simulation of GaN material and devices: an application to GaN APDs

Enrico Bellotti, Michele Moresco, Francesco Bertazzi

Proceedings Volume 7602, 76021B (2010) https://doi.org/10.1117/12.842088

KEYWORDS: Gallium nitride, Avalanche photodetectors, Ionization, Scattering, Instrument modeling, Data modeling, Electron transport, Phonons, Crystals, Monte Carlo methods

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Proceedings Article | 17 February 2010 Paper

New interpretation of photonic yield processes (450-750nm) in multi-junction Si CMOS LEDs: simulation and analyses

Lukas Snyman, Enrico Bellotti

Proceedings Volume 7606, 760613 (2010) https://doi.org/10.1117/12.843134

KEYWORDS: Silicon, Electrons, Light emitting diodes, Interfaces, CMOS technology, CMOS sensors, Electro optical modeling, Instrument modeling, Standards development, Phonons

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Proceedings Article | 15 February 2010 Paper

Theory of high field carrier transport and impact ionization in ZnO

Francesco Bertazzi, Michele Penna, Michele Goano, Enrico Bellotti

Proceedings Volume 7603, 760303 (2010) https://doi.org/10.1117/12.842562

KEYWORDS: Ionization, Zinc oxide, Scattering, Phonons, Solids, Monte Carlo methods, Ultraviolet radiation, Signal to noise ratio, Avalanche photodetectors, Dielectrics

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Proceedings Article | 23 January 2010 Paper

Intersubband device applications of nitride quantum structures

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Enrico Bellotti, Theodore Moustakas

Proceedings Volume 7608, 76080N (2010) https://doi.org/10.1117/12.836260

KEYWORDS: Quantum wells, Waveguides, Terahertz radiation, Switching, Gallium nitride, Modulation, Ultrafast phenomena, Gallium arsenide, Absorption, Luminescence

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Proceedings Article | 22 October 2004 Paper

Design and development of multicolor detector arrays

Ashok Sood, E. James Egerton, Yash Puri, Enrico Bellotti, Latika Becker, Raymond Balcerak, Siva Sivananthan

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.565140

KEYWORDS: Mercury cadmium telluride, Sensors, 3D modeling, Staring arrays, Arsenic, Chemical elements, Instrument modeling, Mercury, Detector arrays, Infrared detectors

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Multi-color infrared (IR) focal planes are required for high performance sensor applications. These sensors will require multi-color focal plane arrays (FPA) that will cover various wavelengths of interest in MWIR/LWIR and LWIR/VLWIR bands. There has been a significant progress in HgCdTe detector technology for multi-color MWIR/LWIR and LWIR/VLWIR focal plane arrays [1,2,3]. Two-color IR FPA eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in a simpler, reliable and affordable systems. The complexity of multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally material characteristics are only relatively controllable and depend on the process repeatability. In this context the ability of performing simulation experiments where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications. Complex multi-color detector pixels cannot be designed and optimized by using a conventional 1D models. Several additional physical phenomena need to be taken into account. In designing a conventional photovoltaic IR detector array, a trade off exists on the choice of the pixel pitch, the pixel area and its height. The main goal of the device optimization is to reduce the pixel cross talk while keeping a high filling factor and detection efficiency. If the pixel height is made comparable to the lateral pixel dimension the contribution of the lateral photocurrent and lateral generation-recombination current becomes relevant and a full 2D simulation needs to be performed. It also important to point out that the few attempts to perform 2D simulations have reached the conclusion that for advanced IR arrays a full 3D approach should be used. The most challenging aspect of the array design and simulation is the pixel cross-talk effects. Since this is caused by the interaction with the four nearest neighboring pixels, even a description based on a 2D simulation model in most cases is not adequate. It is consequently important to include results from 3D simulation models as a guide to build lower dimensionality models.

Proceedings Article | 25 July 2003 Paper

Computational electronics of wide-bandgap semiconductors

Enrico Bellotti

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.483606

KEYWORDS: Gallium nitride, Scattering, Phonons, Crystals, Wide bandgap semiconductors, Silicon carbide, Monte Carlo methods, Acoustics, Electronics, Semiconductors

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Showing 5 of 41 publications

Conference Committee Involvement (16)

Physics and Simulation of Optoelectronic Devices XXXIII

28 January 2025 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXXII

30 January 2024 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXXI

31 January 2023 | San Francisco, California, United States

Infrared Sensors, Devices, and Applications XII

24 August 2022 | San Diego, California, United States

Physics and Simulation of Optoelectronic Devices XXX

24 January 2022 | San Francisco, California, United States

Infrared Sensors, Devices, and Applications XI

4 August 2021 | San Diego, California, United States

Physics and Simulation of Optoelectronic Devices XXIX

6 March 2021 | Online Only, California, United States

Infrared Sensors, Devices, and Applications X

24 August 2020 | Online Only, California, United States

Physics and Simulation of Optoelectronic Devices XXVIII

3 February 2020 | San Francisco, California, United States

Infrared Sensors, Devices, and Applications IX

14 August 2019 | San Diego, California, United States

Physics and Simulation of Optoelectronic Devices XXVII

5 February 2019 | San Francisco, California, United States

Infrared Sensors, Devices, and Applications VIII

22 August 2018 | San Diego, California, United States

Physics and Simulation of Optoelectronic Devices XXVI

29 January 2018 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXV

30 January 2017 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXIV

15 February 2016 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXIII

9 February 2015 | San Francisco, California, United States

Showing 5 of 16 Conference Committees

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